The luminescence is characterized by a broad PL band centered at 779 nm.doi:10.1007/s11082-016-0630-yEmna KadriApplied Physics LaboratoryMonem KrichenApplied Physics LaboratorySlim ElleuchApplied Physics LaboratoryAdel Ben ArabApplied Physics Laboratory...
Optical properties of Si-O-N-F films as a phase shift mask material for 157 nm optical lithographyApplication, Experimental/ CVD coatingsoptical propertiesphase shifting maskssilicon compoundsultraviolet lithography/ optical propertiesSi-O-N-F films...
For the interpretation of the optical properties we shall use the latter model here, but the former model would give similar results. We shall show what information concerning the changes of the electronic structure due to the loss of the long-range order can be deduced from the changes ...
Optical properties, band gap, and surface roughness of Si3N4. J. Bauer. Physica Status Solidi A Applied Research . 1977J. Bauer, Phys. Stat. Sol. (a), 39 [2], 411–418 (1977).Bauer J., Optical properties, band gap, and surface roughness of Si3N4, Phys. Stat. Sol. A, 1977,...
The lack of order in amorphous chalcogenides offers them novel properties but also adds increased challenges in the discovery and design of advanced functional materials. The amorphous compositions in the Si–Ge–Te system are of interest for many applications such as optical data storage, optical se...
The fabrication of Ge(Si) self-assembled islands on Si substrates has attracted much attention in the last several years because of their great potential for practical application. In this paper we present the results of investigations into the growth and optical properties of single and multilayer...
Optical properties in 1D photonic crystal structure using Si/C60multilayersSi/C60多层膜一维光子晶体的光学特性富勒烯Si多层膜光子带隙转移矩阵法The feasibility of using Si/C60 multilayer films as one-dimensional (1D) photonic band gap crystals was investigated by theoretical calculations using a transfer ...
24. D. Bordel, D. Guimard, M. Rajesh, M. Nishioka, E. Augendre, L. Clavelier, and Y. Arakawa, “Growth ofInAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality atroom temperature in the 1.3 μm band,” Appl. Phys. Lett. 96(4),...
The linear optical properties of (Si ) n /(Ge ) m strained-layer superlattices (SLS's) grown on Si 1 - x Ge x (001) substrates are studied within the fram... C Tserbak,G Theodorou - 《Phys.rev.b》 被引量: 27发表: 1994年 Optical properties of Si-Ge superlattices All existing ...
(2001), First-Principles Calculation of Optical Properties: Application to Embedded Ge and Si Dots. Phys. Status Solidi B, 224: 769–773. doi: 10.1002/(SICI)1521-3951(200104)224:3<769::AID-PSSB769>3.0.CO;2-M Author Information Institut für Festkörpertheorie und Theoretische Optik...