Si 1 xGe x layers have been converted into carrier concentration and drift mobility using the appropriate Hall scattering factor r H that has been determined by the comparison between the chemical B concentration profile (measured by secondary ion mass spectrometry) and the Hall carrier concentration...
Carrier concentration dependent optical properties of wurzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometryCarrier concentration dependent optical properties of wurzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometryInNbuffer...
Passivating contacts are becoming a mainstream option in current photovoltaic industry due to their ability to provide an outstanding surface passivation along with a good conductivity for carrier collection. However, their integration usually requires long annealing steps which are not desirable in ...
Carrier concentration and mobility in B doped Si1−xGexdoi:10.1016/S0921-5107(02)00621-9HallscatteringfactorMobilityBoronSilicon–germaniumHall effect measurements in the 4–300 K temperature range have been used to investigate the electrical properties of B doped Si1−xGex layers (with 0≤x...
Hall Mobility and Carrier Concentration of e-Gun Evaporated Poly-Si FilmsSlightly p-doped poly-Si films were deposited from high resistivity silicon source material and highly n-doped samples were prepared by co-evaporation of antimony. Hall mobilities, carrier......
Concentration 0.2 mg/ml Storage & Handling The antibody solution should be stored undiluted between 2°C and 8°C, and protected from prolonged exposure to light. Do not freeze. Application FC - Quality tested Recommended Usage Each lot of this antibody is quality control tes...
Light detection in the near-infrared region (NIR), especially at the telecommunication wavelengths (1300 and 1550 nm), is an important issue for optical fibre communication systems because of the low disper- sion and low loss characteristics of the silica fibres1. To step into the future of...
The elements of group V, such as P and As, are frequently used as donor dopants, while B and Ga are used as acceptor dopants to modulate carrier concentrations of Si-Ge alloys. The optimal carrier concentration corresponding to the best power factor is about 1021/cm3 and 1020/cm3 for n-...
11.70 After one cycle of TEMAH and D2O (spectra ii), there is a loss of Si–OH groups (negative mode at 800 cm− 1) and the appearance of Si–O–Hf modes (positive feature at ∼ 1000 cm− 1). As is usually the case when the uniform Si–H surface is perturbed, the Si–H...
can be made active by the application of an active electronic circuit applying a voltage to a metallized or highly conductive, doped semiconductor portion proximate the passive optical waveguide, the thereby varying the effective mode index in the waveguide by changing the free-carrier concentration. ...