Short-wave infrared (SWIR) detectors are typically based on III-V epitaxial materials, resulting in expensive devices, especially when used in a linear on two-dimensional focal plane array. Colloidal quantum dots (QDs) as a new optoelectronic material, provides an alternative...
Band-engineered dual-band visible and short-wave infrared photodetector with metal chalcogenide colloidal quantum dots ? 2023 The Royal Society of Chemistry.Dual-band photodetectors have attracted significant attention because of their potential in optical communication, biochemical detection, and environmental...
In such infrared imaging system, In1-xGaxAs based short-wave infrared (SWIR) sensors are well suited to provide better sensitivity of the image in the low-light conditions because it can detect the reflected light from objects and provides intuitive image, which is similar to visible images. ...
Imec researchers have developed a prototype high-resolution short-wave-infrared (SWIR) image sensor with record small pixel pitch of 1.82 µm. It is based on a thin-film photodetector that is monolithically integrated on a custom Si-CMOS readout circuit. A fab-compatible process flow paves t...
Highly sensitive SWIR photodetector using carbon nanotube thin film transistor gated by quantum dots heterojunction Low-dimensional semiconductors have been considered excellent materials to construct photodetectors for infrared detection with an easy process and excelle... S Zhou,Y Wang,C Deng,... - 《...
This study presents an InAs p-i-n photodetector grown on a GaAs substrate (001) by inserting 730-nm thick InxAl1−xAs graded and AlAs buffer layers between the InAs layer and the GaAs substrate. At room temperature, the fabricated InAs photodetector operated in an infrared range of ...
High-performance InGaAs/GaAsSb extended short-wave infrared Electron-Injection photodetector Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China... K Liao,M Huang,N Wang,... - 《Infrared Physics & ...
The fabricated photodetector exhibited a broadband response from 400 nm to 2000 nm, covering the visible and SWIR regions. Its broad spectral range makes it suitable for a wide range of applications. Additionally, the photodetector demonstrated a fast response time of approximately 300 渭s, enabling...
Multicolor voltage-tunable quantum-well infrared photodetector. IEEE Electron Device Lett. 1993, 14, 566–568. [Google Scholar] [CrossRef] Gunapala, S.D.; Levine, B.F.; Ritter, D.; Hamm, R.; Panish, M.B. InGaAs/InP long wavelength quantum well infrared photodetectors. Appl. Phys. ...
short-wave infrared;GaN/AlN;ISB;infrared detector;quantum well 1. Introduction As a novel intersubband (ISB) transition detector, GaN-based quantum well infrared detectors have a very high degree of design freedom [1,2,3]. GaN-based quantum well has large band offset of conduction band, short...