recombinationdeep centershyperfine interactionspin beatsExperimental and theoretical studies on optical orientation and spin-dependent recombination in a semiconductor in a magnetic field under the normal incidence of circularly polarized radiation onto the sample surface are reviewed. The experiments were ...
The rate formula of Shockley–Read–Hall (SRH) recombination is generalized for multiphonon transitions in an inhomogeneous electric field. A three‐band m... A Schenk - 《Journal of Applied Physics》 被引量: 46发表: 1992年 Characteristics and device applications of erbium doped III-V semiconduc...
The experiments were carried out on GaAs1 -xNx solid solutions, in which Ga2+ interstitial displacement defects play the role of deep paramagnetic centers responsible for spin-dependent recombination. It is established that, in the investigated materials, the hyperfine interaction of a localized ...