Shockley-Read-Hall (SRH) 复合模型是一种用于描述半导体材料中载流子复合过程的理论模型。它被广泛应用于半导体器件的设计和性能评估。 SRH 复合模型基于以下假设:在半导体材料中存在着缺陷能级,这些能级可以捕获和释放自由载流子(电子或空穴)。当一个自由载流子遇到一个缺陷能级时,它可能会被俘获,并在缺陷能级中发生非...
在半导体技术的精密领域中,SRH(Shockley-Read-Hall)复合模型扮演着基石的角色,它如同一个魔术师的手法,精准地描绘了载流子在材料内部的神秘舞蹈。这个理论模型为我们揭示了半导体器件内部复杂行为的内在逻辑,对于其设计和性能优化至关重要。SRH模型的核心理念是,半导体中的缺陷就像一个个能量陷阱,能捕...
Nevertheless, classical ABC and Shockley-Read-Hall (SRH) models are ubiquitously applied to perovskites without considering their validity. Herein, an advanced technique mapping photoluminescence quantum yield (PLQY) as a function of both the excitation pulse energy and repetition frequency is developed ...
OntheShockley-Read-HallModel:Generation-RecombinationinSemiconductorsThierryGoudon1,VeraMiljanovi´c2,ChristianSchmeiser3March9,2007AbstractTheShockley-Read-Hallmodelforgeneration-recombinationofelectron-holepairsinsemiconductorsbasedonaquasistationaryapproximationforelectronsinatrappedstateisgeneralizedtodistributedtrappedsta...
On the Shockley-Read-Hall Model: Generation-Recombination in Semiconductors Thierry Goudon1 , Vera Miljanovi2 , Christian Schmeiser3 c March 9, 2007 Abstract The Shockley-Read-Hall model for generation-recombination of electron-hole pairs in semiconductors based on a quasistationary approximation for ...
Shockley-Read-Hall (SRH) recombination dark current in planar diffused P~+n heterostructure InP/In_(0.53)Ga_(0.47)As/InP high density small pitch Focal... R Dewames,EA Decuir,J Schuster,... - Spie Defense + Security Conference 被引量: 0发表: 2018年 High-transconductance heterostructure Ga...
网络霍尔 网络释义 1. 霍尔 而后者又包括肖克利-瑞德-霍尔(Shockley-Read-Hall)型 非发光复合 R SRH 及俄歇复合等,因此 R 可由上述各项之和表示。 ja.scribd.com|基于 1 个网页
Through current-voltage-luminance characterizations, we determine parameters A and C related to Shockley-Read-Hall and Auger recombination. We find that coefficient A is strongly dependent on LED size, indicating a drastic effect of sidewall defects on the performance of LEDs. On the other hand, ...
J-V-T and C-V measurements show that at room temperature, current transport in the sputtered devices is dominated by Shockley-Read-Hall recombination and that the CdTe layer, under zero applied bias, is fully depleted with a carrier... Treharne,E Robert - 《Durham University》 被引量: 1发...
On the Shockley-Read-Hall Model: Generation-Recombination in Semiconductors Thierry Goudon1 , Vera Miljanovi?2 , Christian Schmeiser3 c January 17, 2006 Abstract The Shockley-Read-Hall model for generation-recombination of electron-hole pairs in semiconductors based on a quasistationary approximation ...