网络敏感场效应管 网络释义 1. 敏感场效应管 集成有击穿电压为650 V的抗雪崩“敏感场效应管(Sense FET)”,内置上电启动电路; 集成了过压(OVP)、过载(OLP)和过热等保 … www.21ic.com|基于42个网页
4.如权利要求1所述的功率IC器件,其中所述检测电阻器的电阻比所述sense FET的器件电阻小至少4倍。 5.如权利要求1所述的功率IC器件,其中所述sense FET的器件电阻比所述横向HVFET的器件电阻大至少10倍。 6.如权利要求1所述的功率IC器件,其中所述第三阱区在所述衬底的表面处与所述第二体区隔开一第一距离。
具有内含式sense FET的功率集成电路器件 (57)摘要 本发明涉及具有内含式sense FET的功率集成电路器件,所述功率集成电路器件包括主横向高压场效应晶体管(HVFET)和邻近定位的横向sense FET,该HVFET和sense FET两者都形成在一高电阻率衬底上。检测电阻器形成于布置在该HVFET和sense FET之间的所述衬底的一区域中的阱区...
A circuit for providing drive current to a coil of a motor uses a sensefet current sensing device having a sense node and a source node. The source node is connected to deliver current to the coil, wherein a sense current proportional to said delivered current is produced on the sense ...
sense amplifier A sense amplifier according to an example of the present invention has first, second, third and fourth FETs with a flip-flop connection. A drain of a fifth FET is connected to a first input node, and its source is connected to a power so... 上田 善寛,岩田 佳久,枝広...
Systems and methods for sense FET calibration 优质文献 相似文献 参考文献 引证文献Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications M.-L. Fan et al., "Variability analysis of sense amplifier for finfet sub- threshold sram applications," Circuits and Systems II: Expres...
In one embodiment, a power integrated circuit device includes a main lateral high-voltage field-effect transistor (HVFET) and an adjacently-located lateral sense FET, both of which are formed on a high-resistivity substrate. A sense resistor is formed in a well region disposed in an area of...
This paper introduces an accurate sense-FET-based inductor current sensor for buck converters. The proposed sensor utilizes nonlinear adaptive biasing to maintain consistent bandwidth and phase margin in the sensor's control loop across a wide range of load currents, leading to high sensing accuracy ...
高压功率器件作为电源管理芯片的重要组成部分,缓解其耐压和比导通电阻的矛盾关系一直是该领域的研究热点.叉指状结构横向高压MOSFET器件的源端指尖部分由于掩膜板为弧形所造成横向曲率效应容易导致器件提前击穿.另外,模拟系统中常利用SENSE FET做电流检测,实现电流模式控制电源管理芯片或者过流保护等作用,而检测器件的源极不...
LMG3622 SLUSEZ0A – SEPTEMBER 2023 – REVISED NOVEMBER 2023 LMG3622 650-V 120-mΩ GaN FET With Integrated Driver and Current-Sense Emulation 1 Features • 650-V 120-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control ...