diffusion self-alignment MOS integrated circuit 英 美 [dɪˈfjuʒən self əˈlaɪnmənt mɔs ˈɪntɪɡreɪtɪd ˈsɜːrkɪt]网络 扩散自对准MOS集成电路; 集成[集体]...
self alignment 【电】 自动对准 alignment circuit 调整电路, 校准电路 complementary MOS logic circuit 【计】 互补金氧半导体逻辑电路 dynamic MOS circuit 动态金(属)氧(化物)半导体电路, 动态MOS电路 self diffusion 【化】 自扩散 相似单词 self alignment 自动调准,自位 self diffusion 自扩散 mo...
PRODUCTION OF SELF ALIGNMENT TYPE MOS TYPE FIELD EFFECT TRANSISTORPURPOSE:To prevent gate breakdown with ease by etch-forming a gate oxide film with a gate electrode as a mask and etching away the unrequired portion of the gate electrode existing on the undercut portion. CONSTITUTION:After a ...
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self alignment 【电】 自动对准 diffusion self alignment MOS integrated circuit 【计】 扩散自对准MOS集成电路 in alignment adv.成一直线 in alignment with 与…成一条直线;与…一致 axiom of alignment 关联公理 angular alignment 角对准 clutch alignment 离合器对中 alignment apparatus 对准装置,校...
After polysilicon etching, a dielectric layer (34') having a high step coverage is deposited and is used as an injection barrier layer, thereby resolving an issue of photoetching alignment precision and enabling self-aligned injection of... H Peng,Y Zhang,H Mo 被引量: 0发表: 2017年 LDMOS...
100-nm n-/p-channel I-MOS using a novel self-aligned structure The proposed structure shows some advantages over the conventional one in terms of self-alignment and reduced number of photolithography masks. It leads to ... WY Choi,JD Lee,YJ Park,... - 《IEEE Electron Device Letters》 ...
摘要：An MOS-gated power semiconductor device is formed by a process in which a self-aligned device cell is formed without any critical alignments. A sidewall spacer is used to mask the etching of a depression in the silicon to reduce the number of critical alignment steps. An optional ...
PROBLEM TO BE SOLVED: To provide a CMOS(complementary metal oxide silicon) image sensor which can perform high-speed operations and performs a self-alignment silicide step while minimizing the change of existing operations. SOLUTION: A CMOS image sensor includes a photosensitive area, on which embed...
摘要: PROBLEM TO BE SOLVED: To provide a CMOS(complementary metal oxide silicon) image sensor which can perform high-speed operations and performs a self-alignment silicide step while minimizing the change of existing operations.收藏 引用 批量引用 报错 分享 ...