for a self-alignment scheme for a heterojunction bipolar transistor (HBT). An HBT is provided, comprising an extrinsic base, a first self-aligned silicide layer over the extrinsic base, and a nitride etch stop layer above the first self-aligned silicide layer. A continuous layer is also ...
[0004] As the horizontal device feature sizes continue to shrink to submicrometer dimensions, it is necessary to use self-alignment techniques to relax the alignment requirements and improve critical dimension (CD) control. One such technique is called a self-aligned contact (SAC) etch, in which...
It requires only one photolithography step without alignment, instead of 4 to 6. As a consequence, the fabrication cost of BSC solar cell has been highly red... P Verlinden,B Lafontaine,O Evrard,... - Springer Netherlands 被引量: 6发表: 1991年 Enhanced self aligned contact (SAC) etch ...
Traditionally, the hydrophobic effect is described as an alignment of water molecules surrounding the unassociated hydrophobes (shown in Fig. 3.25B). This effect leads to a reduction in entropy (S). This entropy reduction (ΔS) can be considered an offset when the hydrophobes are associated ...
The exposed etch stop layer portion is removed. A conductive material is deposited to provide a self-aligned contact down to the trench contact on the one side of the gate structure, to form a gate contact down to the gate conductor and to form a horizontal connection within the ILD over ...
This paper investigates a low damage reactive ion etch (RIE) process to make thin silicon nitride sidewall spacers for the fabrication of self-aligned sub-100 nm gate length III–V metal–oxide–semiconductor field-effect-transistors (MOSFETs). Self-alignment is essential to minimize the contributi...
nanoscale Cu/SiO2patterns, and excessive ‘mushroom’ growth at the edges and formation of nucleation defects on the Cu region are not observed. The ALD method provides a streamlined bottom-up avenue for self-alignment nanomanufacturing and unfolds possibilities for semiconductor applications....
EPE improvement thru self-alignment via multi-color material integration As the industry marches on onto the 5nm node and beyond, scaling has slowed down, with all major IDMs & foundries predicting a 3-4 year cadence for scaling. A major reason for this slowdown is not the technical challenge...
Semiconductor device using self-alignment and method for fabricating the sameNOVELTY - A semiconductor device using self-alignment and a method for fabricating the same are provided to obtain an alignment margin by forming a spacer on an upper end of a contact hole and forming a bit line prior...
The device includes a plurality of gate structures and sidewall spacers, an etch stop layer disposed over the sidewall spacers, an interlayer dielectric (ILD) ... YH Chang 被引量: 0发表: 2013年 Method and structure for self-aligned device contacts 公开了具有部分自对准的接触的半导体结构的...