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[1] Abercrombie, David. “Self-Aligned Double Patterning, Part One,” SemiEngineering, May 15, 2014.http://semiengineering.com/self-aligned-double-patterning-part-one/ [2] Abercrombie, David. “Self-Aligned Double Patterning—Part Deux,” SemiEngineering, August 14, 2014.http://semiengineering...
patterningstandardaligneddoublefriendlysadp Self-alignedDoublePatterningFriendlyConfigurationfor StandardCellLibraryConsideringPlacementImpact Jhih-RongGao,BeiYu,RuHuang * ,andDavidZ.Pan ECEDept.Univ.ofTexasatAustin,Austin,TXUSA78712 * InstituteofMicroelectronics,PekingUniversity,Beijing,China100871 {jrgao,bei,...
The Self Aligned Double Patterning (SADP) module is one scheme to form 3X or 2X line structures by using a dry scanner or immersion scanner. After reliable processes are developed, defect data collection, understanding, characterization, and reduction become important. The learning we obtained at ...
Double-Patterned-Shadow (D-P-S) substrate by performing a first de-protecting procedure using the first filled substrate, wherein a plurality of protected diffusion features having the first activation species therein, a plurality of de-protection regions, and a plurality of self-aligned second (...
Self-Aligned Double Patterning (SADP) Compliant Design Flow Double patterning with 193nm optical lithography is inevitable for technology scaling before EUV is ready. In general, there are two major double patternin... Y Ma,J Sweis,H Yoshida,... - Proceedings of SPIE - The International Societ...
自对准硅化物 (Self -Aligned Silicide) 工艺 传统的 CMOS 工艺(如32nm或更早的节点上)是基于氧化硅/多晶硅结构形成源漏的(即非 HKMG 和非应变源漏的工艺流程),因此称为先栅 ( Gate-First)工艺。在有源区和多晶硅栅区多采用同时形成硅化物的自对准技术,如图所示。
Next, 0.8 μL of sample was pipetted manually onto the bottom chip, and then the liquid cell was assembled with the windows (50 µm × 200 µm) aligned in parallel, and the lines of the holder were sealed off without external flow. LCTEM imaging was performed in a ...
Other means of creating graphoepitaxial templates is the use of so-called sidewall image transfer (or self-aligned double patterning) techniques, where a conformal inorganic material is applied (usually by chemical vapor deposition or a similar process) over a mandrel. The mandrel can be removed ...
be provided in a self-aligned manner with respect to the gate electrode, i.e., the length of the semiconductor fins may be adjusted on the basis of a gate patterning process, thereby providing continuous drain and source areas which connect to the plurality of self-aligned semiconductor fins....