它的发展彻底改变了电能和电机的有效控制。 General Electric introduced the silicon controlled rectifier (SCR), a three-terminal p-n-p-n device, in 1957. The gas-filled tubes used previously were difficult to operate and unreliable. The symmetrical alternating current switch (TRIAC), the gate turn...
The invention provides a silicon controlled rectifier (SCR)-based electrostatic protection device of an integrated circuit, which can improve the maintaining voltage, wherein an electrostatic discharge protection structure of a high-voltage device improves the structure of a traditional high-voltage ...
内容提示: 可控硅判断好坏(SCR is good or bad) SCR detection methods and experience Thyristor (SCR) international common name for Thyyistoy, Chinese abbreviation thyristor. It can work under the condition of high voltage and high current. It has the advantages of high pressure resistance, large ...
Thus for a DC power the gate completely loses its influence once the first triggering pulse is applied across the gate of the device ensuring a latched current from its anode to cathode. It may be broken by momentarily breaking the anode/cathode current source while the gate is completely inac...
Because the SCR power controller is a solid-state device, there are no inherent wear-out modes. Thus, they provide virtually limitless and trouble free operation. Infinite resolution: Power, current or voltage can be controlled from zero to 100% with infinite resolution. This capability allows ex...
is switched on or off when a high DC voltage or a high current is present) • Bulky solution Below figures give the three different solutions, which can be used: Figure 1: The bypass device is put on the DC side and is implement...
is large enough to give the required turn-on gate current (controlled by resistor R1), SCR1will turn on and the charging of the battery will commence. At the commencement of charging of battery, voltage VRdetermined by the simple voltage-divider circuit is too small to cause 11.0 V ...
Substrate-Triggered SCR Device for On-Chip ESD Protection in Fully Silicided Sub-0.25-μm CMOS Process. The turn-on mechanism of a silicon-controlled rectifier (SCR) device is essentially a current triggering event. While a current is applied to the base or s... Ker,Ming-Dou,Kuo-Chun,....
D1is therefore connected on one side to the pad and on the other side to the ground (or VSS) through resistors R2and R3. Thus, when a positive ESD pulse occurs at the pad, diode D1becomes reverse biased and can break down, resulting in current flowing from the pad to the P-type ...
Circuits, device structures and methods are disclosed which protect CMOS semiconductor devices, having oxides as thin as 32 Angstrom, from electrostatic discharge (ESD) by utilizing a parasitic silicon controlled rectifier (SCR), intrinsic to the semiconductor device. The protection is afforded by provi...