Schottky Diode In subject area: Physics and Astronomy A Schottky diode is defined as a semiconductor device created by bringing a thin metal layer into contact with a semiconductor material, forming a junction near the surface. It is commonly used for radiation detection, particularly for detecting...
9ms 1. 0ms 1 V (I 1: +, D3 : C) 2 I ( V3) Time The blue curve in Figure 10 is the power dissipated in the diode avalanche. It is a triangular shape curve with a peak power at 118 W during 120 µs. This waveform is equivalent to a 59 W ...
Some methods, which have recently been proposed, allow the determination of the diode parameters even in the presence of a high series resistance. A similar but much simpler treatment is presented here. Using theI‐Vplot, a straightforward determination of the series resistanceRand the ideality fac...
In particular, we analyze the effect of nonuniformity of an avalanche breakdown over the diode area on the maximal avalanche energy (MAE) that can be dissipated by the diode prior to its secondary thermal breakdown. For estimating the uniformity of an avalanche breakdown, we propose that the ...
tendencyorshapewithcalculatedcurvebutatlowerefi ciencyleve1.Thisdiscrepancymayduetothemismatchbetweeninput impedanceofdiodeandloadresistanceandalsoimpropermeasurementsetup.TheRF-DCconversionefi ciencyisverylowandcanbe improvedbyreducingthecontactresistancedowntoseveralQ.ThiscanbeachievedbyreducingtheSchoRkycontactarea...
摘要原文 Fabrication and characterisation of nearly ideal Pt/n-GaN Schottky barrier diodes are described. The n-GaN employed was grown by the reactive molecular beam epitaxy method. The capacitance/voltage (C/V) characteristics indicate marginal trap density in the semiconductor, and the current/volt...
Schottky diode devices using mono- and multi- layer MoS2 channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type behavior of the MoS2 thin flakes and the devices showed clear rectifying performance. We also...
In summary, this work has conducted a comprehensive analysis of the phenomenon and underlying mechanisms of Schottky barrier diode (SBD) leakage on both free-standing and sapphire substrates through variable temperature current–voltage (IV) testing. The findings indicate that compared to the utemp-SBD...
iv. a buried collector layer of said semiconductor material of second conductivity type formed in said substrate and underlying said collector region and said base region; and b. a Schottky diode structure adjacent to said base region, said Schottky diode structure having a diode junction in elec...
Schottky diode100suffers from a low breakdown voltage. FIG. 2 illustrates an I-V curve of Schottky diode100, wherein the X-axis indicates the reverse voltage VR applied on Schottky diode100, and the Y-axis indicates the leakage current IR. It is noted that with the increase in the reverse...