电器电子专业英语词汇 ... saturation point 饱和点saturation region饱和区域saturation resistance 饱和电阻 ... www.chuandong.com|基于30个网页 3. 饱和阶段 ...其中可分为线性阶段(linear region),饱和阶段(saturation region),雪崩阶段(avalanche region) 和钳回阶段(snapback region)。
沪江词库精选saturation region是什么意思、英语单词推荐 饱和区 相似短语 saturation region 饱和区 region of saturation current 饱和电流区 in the region of 在….地区,在…左右,在…附近 in the region 在本地区 black saturation 黑色饱和 acoustic saturation 声饱和 base saturation 盐基饱和作用 ...
Saturation region,**VDS≥ (VGS− VT): ID=IDSSVT 2[VGS−Vτ]2(1+λVDS) where, IDSS= Zero-bias saturation drain current,i.e., VGS= 0 V,VDS> (VGS− VT), VT=Threshold voltage,† λ = Channel-length modulation factor. ...
yield beneficial velocity overshoot and DICE in the saturation region of nanoscale DG MOSFETs, which is not the case in conventional, single-gate highly doped (N B >10 18 cm -3 ) MOSFETs. nMOSFETs ⇒electron mobilities pMOSFETs ⇒hole mobilities µ n ( e f f ) [ c m 2 / V...
4) Region saturation 域饱和度 例句>> 5) non-saturated area 非饱和区域6) flat spot(or premature saturation) problem 饱和区域问题补充资料:(C14-18-饱和、C16-18-不饱和)脂肪酸钾盐 CAS:68002-80-2分子式:C14-18 and C16-18-Unsaturated alkylcarboxylic acid potassium salts中文名称:(C14-18-饱和...
This application relates to a circuit for determining whether a first transistor device is in a predetermined operation mode. The circuit comprises comprising: a second transistor device, wherein control terminals of the first and second transistor devices are connected, and one of input and output ...
A method for providing a mathematical expression representing the operation of a field-effect transistor in its saturation region is disclosed. Data representing the operation of the transistor is divided into data segments with a monomial function fitted to each of the segments. The data segments ...
region of saturation current的意思是饱和电流区。在电子学领域，这个概念通常与半导体器件的工作状态有关：定义：饱和电流区是指半导体器件在特定条件下，其电流输出达到一个相对稳定的最大值，不再随输入信号的增加而显著变化的区域。特性：在饱和电流区内，器件的电流电压特性曲线趋于平缓，表明电流对电压...
A d.c. model for an MOS-transistor, operating in the saturation region, is presented. Drain current as well as drain conductance are shown to be in good agreement with measurements. The saturation is characterised by two parameters f and z which can be determined from measured device ...
A new extraction method for source series resistance and mobility reduction coefficient with transverse field, based on the MOSFET transconductance modeling in the saturation region, is reported. The simple associated transconductance model also appears to be extremely useful for optimal parameter extraction...