New Development, Theoretical or Mathematical, Experimental/ current densityelemental semiconductorsMOS-controlled thyristorssilicon/ dual channel emitter switched thyristordiode divertersaturation current densityon-state voltage dropP-baseforward biased safe operating area...
The hole concentration (pSC) in the space charge region then exceeds the electron concentration (nSC) because the saturated velocities for holes and electrons are nearly equal in silicon. Consequently, the net positive charge in the current saturation mode becomes larger than the background donor ...
Relation of dark and illuminated diode parameters to the open-circuit voltage of amorphous silicon p-i-n solar cells We have measured the current‐voltage characteristics ofa‐Si:Hp‐i‐nsolar cells having open‐circuit voltages (Voc) between 0.70 and 0.90 V as a function......
Carrier lifetimes of 60 ps at 4.2 K and 200 ps at 77 K could be estimated. The only conceivable mechanism explaining these short time constants is the capture of infrared excited holes by ionized shallow acceptors in the highly compensated p-side of the diode....
room temperature. Magnetron sputtering has a deposition rate that is approximately ten times faster than that of RF sputtering, which is an advantage in commercial applications such as magnetic head production. The substrate may be a silicon dioxide, alumina, chromium, tantalum or titanium, for ...
Varner. On the determination of the emitter saturation current density from lifetime measurements of silicon devices. Prog Photovoltaics Res Appl 2012; DOI: 10.1002/pip.2167.H. Mackel and K. Varner, On the determination of the emitter saturation current density from lifetime measurements of silicon...
Varner. On the determination of the emitter saturation current density from lifetime measurements of silicon devices. Prog Photovoltaics Res Appl 2012; DOI: 10.1002/pip.2167.H. Mackel and K. Varner, "On the determination of the emitter saturation current density from lifetime measurements of ...
Multicrystalline SiliconCu(InGa)Se_2We present two applications of the Green's expression for saturation current vs. bandgap (E_g). The first one regards the evaluation of E_g in solar cells. The approach is based on the determination of the saturation current in the quasi-neutral regions (...
IEEE JOURNAL OF PHOTOVOLTAICSJ. Muller, K. Bothe, S. Herlufsen, T. Ohrdes, R. Brendel, Reverse saturation current density imaging of highly doped regions in silicon employing photo- luminescence measurements, IEEE J. PV 2 (2012) 473-478....
Simple analytical relations expressing the influence of electric field strength E prevailing in the heavily-doped quasi-neutral layer of ultra-shallow (xj = 01 to 0.3 脦录m) silicon junctions on the emitter component of the reverse saturation current density J0 are obtained. It is shown ...