Further, the connection part between the Dumet wires 2 and the external lead wires 4 which are coated with the insulating resin are set at an interval of <=10mum.IZUMI YASUNOBU泉 康伸YAGATA KAZUHIKO屋ケ田 和彦NOGUCHI YASUO野口 康夫
Positive sa - misuta material 专利名称：Positive sa - misuta material 发明人：SANO MAKOTO,佐野 誎ITO NORIMITSU,鬼頭 範光,KAWAHARA TAKAHIKO,河原 隆彦 申请号：JP特願平2-219529 申请日：19900820 公开号：JP第2536679号B2 公开日：19960918 专利内容由知识产权出版社提供 摘要：PURPOSE:To provide a ...
(57)< Abstract > < Objective > At the time of glass seal electric property of sa - misuta element assemblyThe glass seal which possesses the property which is not a possibility of changing, stabilizesStopping forma sa - misuta is offered. < Constitution > The sa - misuta element assembly ...
Constituent null for sa - misuta 来自 掌桥科研 喜欢 0 阅读量: 9 申请(专利)号: JP19910073927 申请日期: 1991-03-13 公开/公告号: JP2948934B2 公开/公告日期: 1999-09-13 申请(专利权)人: TEII DEII KEI KK 发明人:K Keiichi,M Nobuyuki 摘要: PURPOSE:To provide a compsn. for a high ...
Further, the connection part between the Dumet wires 2 and the external lead wires 4 which are coated with the insulating resin are set at an interval of <=10mum.NOGUCHI YASUOIZUMI YASUNOBUYAGATA KAZUHIKO
Negative characteristic sa - misutaYOKOTA MITSUO横田 充男
Thin film sa - misuta植田 茂樹下谷 毅夫長井 彪福田 祐
Positive sa - misuta device (57)< Abstract > < Topic > With the alteration of simple configuration, the armor case itselfStoring heat with exoergism of the positive thermister, the co... 高野 睦広,野原 洋 被引量: 0发表: 1999年 Positive sa - misuta device (57)< Abstract > < Topic...
文库来源 求助全文 Oxide semiconductor null for sa - misuta 优质文献 相似文献Reevaluation of the spin-trapped adduct formed from 5,5-dimethyl-1-pyrroline-1-oxide during the respiratory burst in neutrophils. By employing EPR spectrometry with the aid of a spin-trapping agent, 5,5-dimethyl-1-...
Thin film sa - misuta長井 彪植田 茂樹下谷 毅夫福田 祐