其他特性:FREE WHEELING DIODE外壳连接:ISOLATED 配置:SINGLE二极管元件材料:SILICON 二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2 JESD-609代码:e3元件数量:1 端子数量:2最高工作温度:175 °C 最低工作温度:-65 °C最大输出电流:1 A ...
描述: DIODE SCHOTTKY 40V 1A DO41 数据手册:下载1N5819RL.pdf立即购买 数据手册 价格&库存 1N5819RL 数据手册 DATA SHEET www.onsemi.com Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS 1N5817, 1N5818, 1N5819 This series employs the Schottky Barrier principle in a...
1N4936, 1N4937 1N4935 and 1N4937 are Preferred Devices Axial−Lead Fast−Recovery Rectifiers Axial−lead, fast−recovery rectifiers are designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference and free wheeling diodes....
Inductive Load 0.375''(9.5mm) Lead Length 30 0 100 80 40 60 1 2 4 6 8 10 20 0 50 100 150 Number of Cycles Ambient Temperature (℃) FIG.4: Typical Reverse Characteristics FIG.3: Forward Voltage 20 100 10 Tj=125℃ 4.0 2.0 10 Tj=100℃ 1.0 ...
We offer a broad portfolio of IGBT chips assembled in discrete plastic packages, so called Discretes IGBTs, which are available as Single IGBTs and co-packed with freewheeling Diode. This devices are suitable for applications such as General Purpo...
load condition and with rated V RRM applied 850 A 10 ms sine or 6 ms rect. pulse 230Non-repetitive avalanche energy E AS T J = 25 °C, I AS = 0.5 A, L = 60 mH 7.50mJ Repetitive avalanche current I AR Current decaying linearly to zero in 1 µs Frequency limited by T...
large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Fe...
Resistance load, Ta =60℃ IF(AV) A IFSM A Forward Surge Current (Non-repetitive) @60Hz Half-sine wave,1 cycle, Tj=25℃ 2.0 70 Forward Surge Current (Non-repetitive) @1ms, square wave, 1 cycle, Tj=25℃ 120 Current squared time @1ms≤t8.3≤ms Tj=25℃,Rating of per diode I2t A...
metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. http:/...
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY 外壳连接:ISOLATED配置:SINGLE 二极管元件材料:SILICON二极管类型:RECTIFIER DIODE 最大正向电压 (VF):1 VJEDEC-95代码:DO-201AD JESD-30 代码:O-PALF-W2JESD-609代码:e3 最大非重复峰值正向电流:80 A元件数量:1 ...