In particular, the MBE 49 GaN is a suitable for producing high-quality GaN layers on silicon with improved voltages, considerably reduced RF losses and higher throughput with the required diameters, says Riber. Advantages of MBE for GaN processing are said to include in particular a lower growth...
The MBE 49 system is fully automated and powered by Crystal XE process control software. It integrates in-situ instrumentation tools that enable precise monitoring and control, ensuring high-quality epitaxial growth processes, says Riber. The technology is fully compatible with 200mm silicon wafers. ...
For 5G communications, GaAs/GaN-based devices are seriously considered, to be used in RF transceivers of mobiles; GaAs and GaN are also candidates of choice in 5G antennas, where silicon devices cannot reach the required performance without increasing the number of channels, i.e., the number o...
Riber launched MPVD300 in 2009, a thin-film, SEMI-compatible, evaporation system which enables to manufacture next-generation silicon chips. In 2010, Riber has started to address one of the biggest problems facing manufacturers of copper indium gallium (di)selenide (CIGS) thin-film solar cells:...