Impact of RF-GD-OES in practical surface analysis / K. Shimizu [et al.] // Spectrochimica Acta: Part B. 2003. V. 58. P. 1573-1583.Shimizu, K., Habazaki, H., Skeldon, P., & Thompson, G. E. (2003). Impact of RF-GD-OES in practical surface anal- ysis. Spectrochimica Acta...
The influence of power (5-18 W) and discharge pressure (5-15 Torr) on emission intensity of element and stability of intensity ratios in middle-low alloy steel using radio frequency glow discharge optical emission spectrometry (rf-GD-OES) were investigated, and the reasons of the influence wer...
深度ele-发言聚吡咯薄膜中的配置文件是用 GD-OES,堀场 JY-5000RF 来衡量的。 翻译结果4复制译文编辑译文朗读译文返回顶部 元素的深度剖面在PPy影片的由GD-OES, Horiba JY-5000RF测量。 翻译结果5复制译文编辑译文朗读译文返回顶部 元素的深度外形在PPy影片由GD-OES, Horiba JY-5000RF测量。
刘向兵目前担任山东新楚文化传媒有限公司法定代表人,同时担任山东新楚文化传媒有限公司执行董事兼总经理;二、刘向兵投资情况:刘向兵目前是山东新楚文化传媒有限公司直接控股股东,持股比例为80%;目前刘向兵投资山东新楚文化传媒有限公司最终收益股份为80%,投资济南中氧气体有限公司最终收益股份为33.33%;三、刘向兵的商业合作...
检测项目:GD-OES( diffusion and interaction with intermediate compounds) 参考标准:Formation mechanisms of Cu(In,Ga)Se2 solar cells prepared from electrodeposited precursors. F. Oliva, C. Broussillou, M. Annibaliano, N. Frederich, P.P. Grand, A. Roussy, P. Collot, S. Bodnar. Thin Solid ...
A.B. Anfone, R.K. Marcus, Radio frequency glow discharge optical emission spec- trometry (rf-GD-OES) analysis of solid glass samples, J. Anal. At. Spectrom. 16 (2001) 506-513.Anfone AB, Marcus RK (2001) J Anal At Spectrom 16:506–513...
Improved quantitative analysis of hard coatings by radiofrequency glow discharge optical emission spectrometry (rf-GD-OES). J Anal Atom Spectrom 2001;16:50-5.Payling R, Aeberhard M, Delfoss D (2001) Improved quantitative analysis of hard coatings by radiofrequency glow discharge optical emissio ...
w203x W. Luesaiwong, R.K. Marcus, Lithium-fusion sample prepara- tion method for radio frequency glow discharge optical emis- sion spectroscopy (rf-GD-OES): analysis of coal ash specimens, Microchem. J. 74 (2003) 59-73.Lithium-fusion sample preparation method for radio frequency glow ...
Secondary ion mass spectrometry (SIMS) has been a very valuable tool for the analysis of bulk materials, particularly in the cases where very high sensitivity is required (e.g. precious metals, catalysts and semiconductor materials). SIMS relies on high energy (2-5 keV) bombardment (sputtering...
The Use of RF-GD-OES for the Characterisation of Thin FilmsPatrick Chapon