网络释义 1. 逆向电压 VR_百度百科 ... VR=voltage regulation , 电压调节(调压)。 VR =Voltage Reverse,LED参数里面的主要参数:逆向电压。 ... baike.baidu.com|基于6个网页
The flow rate between group V element and group III element is reduced to an end value from an initial value gradually. The LED based on GaN shows the breakdown reverse voltage equal to or larger than 60 volt.方文卿江风益熊传兵立王莫春兰勇蒲...
(Max Reverse Voltage) 最大脉冲峰值电流(Peak Forward Current) 焊接温度/时间(Lead Soldering Temperature/Time) 工作环境(Operating Temperature Range) 符号 Symbol PM IFM VRM IFP TSOL TOPR 数值Value 80 30 5 75 240/≤3S -25~+85 单位 Unit mW mA V mA ℃/S ℃ 储存温度(Storage Temperature Range...
LED(1) 其他未分类(1) 商品信息更新时间:2012-11-06 是否提供加工定制是产品类型开关管 是否*是品牌/商标ST意法半导体 型号/规格LL4148材料123 主要参数3用途0 备注0 LL4148 Diode,Reverse Voltage100V,SOD-80 中芯泰电子有限公司,是一家*的集成电路供应商,年轻而充满活力的电子公司。
Forward Voltage, VF Typ.(V) ▲▼ Forward Voltage, VF Max.(V) ▲▼ Angle of Half Intensity(±°) ▲▼ Key Feature ▲▼ VLRE31R1S2 SMD reverse gullwing Yellow 581 588 594 112 285 20 2.1 2.3 60 Standard VLRE31R2S2-XY SMD reverse gullwing Yellow 585 588 591 140 285 20 2.1 2.3 ...
Hi, We are using TPD12S521DBTR in our custom board for HDMI. When we connect HDMI cable for unpowered board we are observing some voltage in the 5V_supply pin (Pin 1) which is enough to turn LED on . Is 55mA switch inside the IC has reverse protection?
LED - Reverse gullwing vishay Part NumberPackageColorDominant Wavelength (nm) or Color Coordinate (x, y)Luminous Intensity IVIFforIV(mA)Luminous Flux ΦVIFforΦV(mA)Forward Voltage, VF(V)Angle of Half Intensity (±°)Key Feature VLRE31R1S1 SMD reverse gullwing Yellow 581 588 594 112 224 ...
LED TypeStandard Package size[mm]3.4x1.25 (t=1.1) Emitting colorRed Dominant wave-length λD(Single)(Typ.)[nm]630.0 Luminous Intensity(Single)(Typ.)[mcd]22.0 Forward Current(IF)[mA]10 Forward Voltage VF (Typ.) [V]1.95 Chip StructureAIGaInP ...
LED Chips Brand Samsung Voltage 12-24V, 24V Voltage Type DC LED Type SMD 5050 Certification CREE, CE, C-tick, EMC, Energy Star, ETL, FDA, GS, LVD, PSE, REACH, RoHS, SAA, E-MARK, DOT, GOST, Soncap, Pvoc, Nrcs, Adr Function Back P...
The Si diffusion layer forms a dual Schottky barrier anode structure, which results in a low Schottky barrier portion to reduce the onset voltage V-ON from 1.3 to 1.0 V (23%). In the same process step, the selectively diffused Si is adopted in the cathode to reduce the ohmic contact ...