Ohrdes, R. Brendel, Reverse saturation current density imaging of highly doped regions in silicon employing photo- luminescence measurements, IEEE J. PV 2 (2012) 473-478.J. Muller, K. Bothe, S. Herlufsen, T . Ohrdes, and R. Brendel, "Reverse Saturation Current Density Imaging of ...
1) reverse saturation current density 反向饱和电流密度 1. The experimental results of J-V characteristic of n-ZnO/p-Si heterojunction are first reported—thereverse saturation current densityof annealed n-ZnO/p-Si heterojunction reduces by 10 times as compared with that of unannealed. ...
p-n junction leakage reverse currentp-n结反向饱和电流 3)reverse saturation current density反向饱和电流密度 1.The experimental results of J-V characteristic of n-ZnO/p-Si heterojunction are first reported—the reverse saturation current density of annealed n-ZnO/p-Si heterojunction reduces by 10 ti...
region of saturation current 饱和电流区 revers saturation current 【电】 逆向饱和电流 irradiation saturation current 辐照饱和电流 saturation current density 饱和电流密度 相似单词 reverse current 反流 saturation n. 1. 饱和,饱和过程,饱和状态 2. 浸透;渗透 3. 色饱和度;色泽纯度 4.【气象学】饱和...
8.1 Reverse bias junction capacitance是【公开课】半导体器件原理I - 香港科技大学 -(英文授课,中英字幕,Principle of Semiconductor Devices Part I)的第47集视频,该合集共计83集,视频收藏或关注UP主,及时了解更多相关视频内容。
The reverse saturation current is due to the diffusive flow of minority electrons from the p-side to the n-side and the minority holes from the n-side to the p-side. There are two terms in the equation for reverse saturation current, and the (Dhpno / Lh) term is holes diffusing from...
less than 1 ms—without any reverse rotation. IPD using inductance saturation provides initial detection accuracy of 60 degrees. However, this performance comes with an unwanted noise component: Typically, six test current pulses must be injected into the motor, which prod...
isahighdensityofgeneration- recombinationcenters,inthelowdopedN regionofthejunction.Theprocessingofthe ultrafastdiodediesample,suppliedbyanother manufacturer,isdifferentfromthefirsttwo samples.OnecanseefromFig.1,thatlinear voltagedependenceoftheleakagereverse current,I R ,proportionaltoV R 1/n ismanifested, ...
FZT1151ATA PNP transistors(BJT) -45V -3A 145MHz 250~800 -300mV/-0.3V SOT-223 high gain /low saturation voltageFZT1151ATA Mark:FZT1151A Package:SOT-223-Batch number:4 05+20 Min Order:10 SMD Ceramic Capacitor CL10A225KA8NNNC 0603 X5R 2.2UF 25V 10%CL10A225KA8NNNC 0603 X5R 2.2UF 25...
, and proteins were precipitated from the supernatant by adding ammonium sulfate to 60% saturation on ice and incubating for 30 min. Proteins were collected by centrifugation (29,400 g, 25 min, 4° C.), dissolved in 20 ml A1 buffer, and filtered through a 0.45-mm polyethersulfone membrane...