room temperatureChanges in the tensile strain and electrical resistivity associated with torsional deformation of copper of varying degrees of purity were investigated at room temperature. The results indicate that the application of tensile loads during torsional deformation of copper increases the tensile ...
which involves the measurement of the apparent resistivity of the subsurface materials were able to determine the existence of chemical pollutants in the soil at 1.5 m to 4.0 m depth, with special reference to the chemically apparent resistivity linked with the low resistivity anomalies of 1 – 10...
The heating current needed to reach a fixed temperature such as the crystallization or melting temperature of the phase-change material varies considerably with the resistivity of the phase-change material. Typically, the electronic circuitry for providing the heating current is designed to work with ...
High resistivity has already been explained, high SAL magnetization desirably maximizes the bias of the MR stripe. Soft magnetic properties are important because the material can be saturated with a small applied field (HK). An HKof less than 15 Oe is desirable. Near zero magnetostriction is im...
electrical resistivity - compilation - low temperature – aluminum – beryllium – cobalt – copper – gold – indium – iron – lead – magnesium – molybdenum – nickel – niobium – platinum – silver – tantalum - tinExperimental electrical resistivity data for 16 pure metals have been ...
layer8, which is patterned to have a spiral plane shape, is formed on the magnetic gap layer6through an insulating layer7composed of polyimide or a resist material. The coil layer8is formed of a non-magnetic conductive material having a small electric resistance such as Cu (copper) and the...
temperature selected above ambient that is less than the destruction temperature of the wire; and T is the time in seconds for which the current I at the voltage V is applied; whereby after said application of voltage and current, the resistance of the wire when compared with the initial ...
20. The method of claim 19, wherein the transition metal comprises copper, aluminum, tantalum or titanium. 21. The method of claim 17, wherein the target material and the core backing component comprise the same material. 22. The method of claim 17, wherein the at least one surface ...
1. Field of the Invention The present invention relates to a magnetoresistive (MR) sensor with a soft adjacent layer (SAL) having high magnetization, high resistivity, low intrinsic anisotropy and near zero magnetostriction, wherein the sensor is an anisotropic MR sensor or a spin valve sensor....
The resistivity of the metals was also measured as a function of pressure at room temperature. Their resistivity decreased and increased with increasing pressure and temperature, respectively. With increasing pressure at room temperature, we observed a sharp reduction in the magnitude of resistivity at...