一些新兴的非易失存储(NVM)技术正被追求用于实现部分的这些理想特性。这些新兴的NVM候选者包括自旋转移矩磁阻随机存取存储器(spin-transfer-torque magnetoresistive random access memory(STT-MRAM))[2],相变随机存取存储器(PCRAM)[3],以及阻变存储器(RRAM)[4]。这些新兴NVM技术有着共同的特点:它们都是非易失性两...
The resistive random access memory (ReRAM) device includes a first amplifier configured to amplify a sensing current corresponding to data sensed in a memory cell, and a second amplifier configured to store the sensing current amplified by the first amplifier, and amplify electric charges when ...
Resistive random access memory (RRAM) is one of the most promising candidates of next-generation non-volatile memories. Comparing with the traditional floating gate Flash memory, RRAM has advantages in cell structure, operation speed, scalability and ease of 3D integration. In this paper, the RRAM...
Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. I
(mlc) Storage, Modeling, and Applications Furqan Zahoor1†, Tun Zainal Azni Zulkifli2*† and Farooq Ahmad Khanday3† Abstract In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory ...
Resistive Random-Access Memory (ReRAM) technology has been viewed as one of the most reliable non-volatile memories that have are emerging in markets. In this research paper, the revolution of ReRAM will be analyzed. Also, the paper will also review the recent progress in the technological de...
IEEE TRANSACTIONS ON COMMUNICATIONS 1Belief Propagation based Joint Detection andDecoding for Resistive Random AccessMemoriesCe Sun, Kui Cai, Guanghui Song, Tony Q. S. Quek, Zesong FeiAbstractDespite the great promises that the resistive random access memory (ReRAM) has shown as the nextgeneration...
The resistive random access memory (ReRAM) device includes a first amplifier configured to amplify a sensing current corresponding to data sensed in a memory cell, and a second amplifier configured to store the sensing current amplified by the first amplifier, and amplify electric charges when stor...
Provided are resistive random access memory (ReRAM) cells, each having three or more resistive states and being capable of storing multiple bits of data, as well as methods of fabricating and operating such ReRAM cells. Such ReRAM cells or, more specifically, their resistive switching layer hav...
We report the fabrication of resistive random access memory (ReRAM) on both Si and PET flexible substrates using TiO2 as the dielectric spacer between Ag e... Y Hu,D Perello,M Yun,... - 《Microelectronic Engineering》 被引量: 21发表: 2013年 Amorphous ZnO based resistive random access memo...