Experiments to Reduce Sintering Temperature of WC-Co Cemented Carbide降低钨钴硬质合金烧结温度的实验钨合金基金属氧化物阴极直热式阴极镍钴试验合金发射管阴极断裂直流发射连续固溶体This paper discusses the characteristic of Ni-Co-W alloy which has high strength, low recrystallization, high resistivity and ...
The smooth overlay plate was manufactured using advanced fusion bond submerged arc welding technology to apply a highly abrasive resistant chromium carbide on to a steel substrate producing consistent chemistry and micro structure (austenitic) with smooth overlay deposit.This ...
Cast iron (Metal.), an impure variety of iron, containing from three to six percent of carbon, part of which is united with a part of the iron, as a carbide, and the rest is uncombined, as graphite. It there is little free carbon, the product is white iron; if much of the ...
Steel, Iron, Copper, Aluminum, Carbide, and some Polymers are all able to benefit from our cryogenic tempering process.If we add an optional heat treatment after our freezing process, we have termed this “cryogenic tempering” because of the additional benefit. Since all changes to metals take...
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Various carbide powders, metal binders, pressing equipment, and other additives are used to form green compacts. The powder is then transformed into rough-shaped blanks through processes such as extrusion, powder injection molding, pressing, and isostatic pressing. Afterwards, the compacted green ...
In this sense, cutting tools industry is constantly looking for new ways to reduce this temperature. This work proposes a novel cemented carbide cutting tool design and fabrication process for enhancing these tools thermal conductivity. This design incorporates copper heat sinks in designated strategic ...
The trace metal analysis of 28-homobrassinilide-Zn-NPs and ethephon-Zn-NPs were performed by using Z-8200 polarized Zeeman atomic absorption spectrophotometer (AAS) Hitachi, Japan with instrumental specifications as mentioned in previous research article47. AAS is a well-known conventional analytical...
PROBLEM TO BE SOLVED: To reduce the on-resistance of a power MOS device without increasing the channel density below a gate area. SOLUTION: This power MOS ... SD Elson,センプル,デクスターエルソン,... 被引量: 0发表: 2000年 SILICON CARBIDE MOSFET DEVICE AND PREPARATION METHOD THEREFOR...
A layer of carbon (e.g., graphite or graphene) at a metal interface (e.g., between an MEOL interconnect and a gate contact or a source or drain region contact, between an MEOL conta