Jain, On the recombination of electrons and holes at traps with finite relaxation time, Solid-State Electr. 24, 749 (1981)S.R. Dhariwal, L.S. Kothari, S.C. Jain, On the recombination of electrons and holes at traps with finite relaxation time, Solid-State Electronics 24 (1981) 749-...
Radiation Resulting from Recombination of Holes and Electrons in Silicon. Phys. Rev. 1956, 101, 1676-1678. [CrossRef]J. R. Haynes,and W. C. Westphal.Radiation resulting from recombination of holes and electrons in silicon. Physical Review . 1956...
因为我们提供在措施,做的一项服务我们只可以买1个片断为每顺序。 [translate] athe recombination of photoinduced electrons and holes, and 再结合photoinduced电子和孔,和 [translate] 英语翻译 日语翻译 韩语翻译 德语翻译 法语翻译 俄语翻译 阿拉伯语翻译 西班牙语翻译 葡萄牙语翻译 意大利语翻译 荷兰语翻译 瑞典语...
O. Kasap, "Langevin recombination of drifting electrons and holes in stabilized a-Se (Cl-doped a-Se: 0.3% As)," Philosophical Magazine, vol. 71, no. 1, pp. 91-96, 1995.C. Haugen and S.O. Kasap, Philos. Mag. B. 71, 91 (1995)....
Bipolar spintronics with generation-recombination of electrons and holes: Macroscopic equationsSpintronicsgeneration-recombinationkinetic theoryasymptotic expansionA new model based on an asymptotic procedure for solving the spinor kinetic equations of carriers and phonons is proposed, which gives naturally the ...
We have determined the Auger recombination kinetics of electrons and holes in colloidal CdSe-only and CdSe/CdS/ZnS core/shell nanoplatelets by time-resolved photoluminescence measurements. Excitation densities as high as an average of 18 electron hole pairs per nanoplatelet were reached. Auger recombinat...
electronsholesThe residual defect of the pulse height defect in a silicon surface barrier detector (SSBD) was taken as recombinations of electrons and holes which were produced by an incident heavy ion. The author reports a new candidate for the residual defect in SSBD. Deviations are described...
The recombination of electrons and holes is a major loss mechanism in photovoltaic devices that controls their performance. We review scientific literature on bimolecular recombination (BR) in bulk heterojunction organic photovoltaic devices to bring forward existing ideas on the origin and nature of BR...
for electrons and holes as minority carriers. This parameter plays an important role in the analysis of p–i–n junction solar cells (see Section 4.3 in Chapter Ia-1). The wealth of available data for crystalline silicon have made it possible to arrive at a consensus as to the magnitude ...
It is well established that exposure of KCl:AgCl (or KCl:TlCl) crystals at 77 K to ionizing radiation results in the trapping of holes as Cl2-, Vcenters, and electrons as Ag(Tl). These crystals emit luminescence at 77 K which persists for many hours after the irradiation. Evidence is ...