PROBLEM TO BE SOLVED: To provide an optical reader capable of reducing a period of time from start of power supply to a CMOS sensor by a user's operation input to completion of analyses of a photographed image.OTSUBO YUSUKE大坪 祐介
Noise Analysis of High-Gain, Low-Noise Column Readout Circuits for CMOS Image Sensors The temporal read noise on the signal path of a complementary metal-oxide semiconductor image sensor is analyzed to investigate the effectiveness of high-g... N Kawai,S Kawahito - 《IEEE Transactions on Elect...
This paper presents a new CMOS stress sensor readout method based on the ratiometric measurement principle. A unique feature of this method is to simultaneously detect the in-plane stress magnitude and angle. The sensor core is a cascoded current mirror structure consisting of a reference input ...
The stacked structure are then assembled to relized MEMS-CMOS 3D heterogeneous integration. Overall, the present work describes an approach for high density MEMS integration. 展开 关键词: CMOS integrated circuits copper integrated circuit interconnections micromachining microsensors readout electronics sensor...
Such digital SiPMs (dSiPMs), produced in a standard CMOS process, where first introduced in [4]. Applications for dSiPMs include the use of dSiPMs as light-sensitive sensor for the readout of scintillating fibers [5]. This work explores the possibility to use a dSiPM, designed at Deutsche...
A new readout circuit for an ultrahigh sensitivity CMOS image sensor. T. Watabe,M. Goto,H. Ohtake,H. Maruyama,K. Tanioka. IEEE Transactions on Consumer Electronics . 2002T. Watabe, M. Goto, H. Ohtake, H. Maruyama, and K. Tanioka, A new readout circuit for an ultra high sensitivity...
A detailed read-out circuit analysis of the VCO based APS CMOS image sensor is presented in this paper. According to the mathematic analysis and simulation results, the read-out speed should be decreased when reducing the bias current. Moreover, the feature of the device gain factor and the ...
This paper proposes a sub-1-V CMOS image sensor using a time-based readout (TBR) circuit. The proposed TBR circuit senses the moment of event from the pixel instead of reading the voltage signal. This allows the use of low power-supply voltage in pixel, providing sufficient dynamic range....
Area-Efficient Low Power CMOS Image Sensor Readout Circuit with Fixed Pattern Noise Cancellation[ J ]. Transactions of Tianjin University ,2010,16 (5) :342-347.赵士彬,姚素英,聂凯明,徐江涛.Area-Efficient Low Power CMOS Image Sensor Readout Circuit with Fixed Pattern Noise Cancellation[J]. ...
A Global-Shutter CMOS Image Sensor with Readout Speed of 1Tpixel/s Burst and 780Mpixel/s Continuous Y. Tochigi, et al.: "A Global-Shutter CMOS Image Sensor with Readout Speed of 1 Tpixel/s Burst and 780Mpixel/s Continuous," IEEE J. Solid-... Tochigi,Y.,Hanzawa,... - 《Digest...