The effects of conventional furnace annealing (CFA) and rapid thermal annealing (RTA) on the interfacial reactions of thin cobalt films on Si(111) have been investigated. The low heating rates (about 10 °Cs -1 )
When multiple streams flow in contact with one another, their mixing is dominated by diffusion through the interface. Therefore, a flow of precursor solution fluid can be readily converted into solid fibers in situ via rapid solidification. Typically, a sample fluid containing precursor solution is ...
This results in considerable time (and energy) savings as compared with tube/box furnace annealing. RTP is most often employed on semiconductors19 – in particular on Si and the III-V groups20–23, in order to generate oxide layers or induce doping, or on functional oxides such as YBCO24....
The effects of conventional furnace annealing (CFA) and rapid thermal annealing (RTA) on the interfacial reactions of thin cobalt films on Si(111) have been investigated. The low heating rates (about 10 °Cs -1 ) associated with CFA lead to impurity segregation at the silicide-Si interface ...
It is found that the dopant diffusion during RTA of dose As implants can be reduced somewhat by employing a 550°C, 1h furnace preanneal prior to RTA. However, the preanneal does not have significant effect on the carrier profiles of the dose implants. In some cases, the preanneal ...
Comparison of annealing quality after 3e15/cm~2 50 keV BF2 + implant between rapid thermal annealing and furnace annealingLow leakage diodes are necessary in order to manufacture high-quality variable capacitance diodes(varicaps),which are used in voltage-controlled oscillators.Junction leakage ...
Comparison between rapid thermal annealing (RTA) and furnace annealing; Elimination of damage and strain by RTA at 700 degrees Celsius; Use of cross-sectional transmission electron microscopy.LieD.Y.C.SongJ.H.EBSCO_AspApplied Physics Letters
This paper is to develop a rapid thermal annealing (RTA) process for thermal annealing of the surface quality of silicon brick before MR-SWS. In this study, a RTA furnace is designed and used to improve the material property of surface of silicon brick. A quartz crucible is used as ...
Wennstrom, U.Norstrom, H.Suni, I.Lindberg, A.Solid State Device Research Conference, 1988. ESSDERC '88P. Wiklund, et al., TiW and Al contacts to shallow P+ junctions - a comparison be- tween furnace and rapid thermal annealing (RTA), J. Phys. 49 (C-4) (1988) 489-493....
(≤100 MPa) the applied electric field (DC pulsing current: 4 V at ≥2000 A) promotes densification further by Joule heating at the particle contacts, a “self-heating” mechanism which further promotes the diffusion rate at the grain boundaries due to thermally-intrinsic defect formation [10,...