The effects of conventional furnace annealing (CFA) and rapid thermal annealing (RTA) on the interfacial reactions of thin cobalt films on Si(111) have been investigated. The low heating rates (about 10 °Cs -1 ) associated with CFA lead to impurity segregation at the silicide-Si interface ...
Rapid annealing furnace equipment can be used for rapid thermal annealing, rapid thermal oxidation, rapid thermal nitridation, silicidation, diffusion, compound semiconductor annealing, post-ion implantation annealing, electrode alloying, crystallization and dens...
Rapid furnace annealing of YBa 2 Cu 3 O x thick films on Ni/NiO and inconel substrates prepared by spray pyrolysis of YBa 2 Cu 3 O x powderExperimental/ Auger effectbarium compoundsceramicshigh-temperature superconductorspowder technologyrapid thermal annealing...
Rapid annealing furnace equipment can be used for rapid thermal annealing, rapid thermal oxidation, rapid thermal nitridation, silicidation, diffusion, compound semiconductor annealing, post-ion implantation annealing, electrode alloying, crystallization and densification, alloy melting point anal...
(3) Excellent temperature uniformity and reproducibility The equipment has realized temperature uniformity and reproducibility like a batch-type furnace. (1.000 Cº +/-1Cº)(4) Slip free process Original wafer support and uniform radiation heating can prevent slip generation....
Lamp heated rapid thermal annealing RLA and rapid thermal processing RTP equipment are using lamp heating in order to ramp up and cool down semiconductor wafers (silicon, germanium, GaAs, III/V-semiconductors, SiC) and glass wafer (on a susceptor) pretty fast. This equipment is therefore mainly...
2.5)TiO_3 thin films were prepared by RF-magnetron sputtering method and crystallized byrapid thermal annealingand conventional furnace annealing.实验表明:钛酸锶钡薄膜在500℃开始结晶,到700℃左右时结晶比较完善,晶化过程中没有出现择优取向;从表面形貌和X射线衍射图综合分析,快速退火的晶化效果要优于常规退火...
The dielectric constant is about 370, the dielectric loss tangent is less ferroelectric properties of the thin films annealed by rapid thermal annealing (RTA) process, conventional furnace annealing (CFA) process and thermal annealing process of combination of RTA with CFA were compared.doi:10.1080/...
5)TiO_3 thin films were prepared by RF-magnetron sputtering method and crystallized byrapid thermal annealingand conventional furnace annealing. 实验表明:钛酸锶钡薄膜在500℃开始结晶,到700℃左右时结晶比较完善,晶化过程中没有出现择优取向;从表面形貌和X射线衍射图综合分析,快速退火的晶化效果要优于常规退火...
5)TiO_3 thin films were prepared by RF-magnetron sputtering method and crystallized by rapid thermal annealing and conventional furnace annealing. 实验表明:钛酸锶钡薄膜在500℃开始结晶,到700℃左右时结晶比较完善,晶化过程中没有出现择优取向;从表面形貌和X射线衍射图综合分析,快速退火的晶化效果要优于常规...