The stress dependence of the Raman bands of β-silicon nitride,β-Si3N4, has been investigated. In the stress range examined (from-200 to +200 MPa), low-frequency shift bands (namely the 183, 205, and 226 cm−1 lines) do not show any frequency change with the stress, whereas the ...
K Honda,S Yokoyama,SI Tanaka - 《Journal of Applied Physics》 被引量: 29发表: 1999年 S. J. Cyvin, B. N. Cyvin, P. Klæboe and E. Augdahl, Assignment of Infrared-active Vibrational Frequecies in Butatriene. Acta Chem. Scand. 19, 833-838 (1... The Raman spectrum of propyn...
J.; Marunaka, Y. Effect of pH and Monovalent Cations on the Raman Spectrum of Water: Basics Revisited and Application to Measure Concentration Gradients at Water/Solid Interface in Si3N4 Biomaterials. Chem. Phys. 2015, 463, 120-136.
Observation of Stimulated Brillouin Scattering in Silicon Nitride Integrated Waveguides So far, only stimulated Brillouin scattering (SBS) has not yet been reported. Here we observe, for the first time, backward SBS in fully cladded Si3N4 waveguides. The Brillouin gain spectrum exhibits an unusual ...
(d) Raman spectrum of the transferred flake in (d) showing the same characteristics peaks as in (c). silicon oxide with 1 M KOH over a period of 2 hours, Fig. 1(c). The etching is followed by washing the PMMA/ flakes of residual (Fig. 1(d)), flakes KfaOciHngindoawnn...
The spectra were obtained using a laser excitation source of NdYag (λ = 532 nm) and a Nikon lens with 100× magnification (NA = 0.90). For each spectrum, an integration time of 100 ms was used. 3. Results 3.1. Crude oil characterization The physical–chemical characterization (BSW, API...
(10 -6 – 10 -9 ) I 0 10 4 cm -1 a<< Energy levels August 19, 2012 ICQNM 2012 Rome, Italy 5 Vibrational states Excited electron states Virtual states Fluorescence Rayleight IR Stokes Raman Anti-Stokes Raman E 1 E 0 E 2 h 0 0 =0 =1 =2 =0 =1 =2 is independent of 0 ...
6) Raman spectrum Raman光谱 1. Fourier transform infrared spectroscopy (FTIR) andRaman spectrumanalyses . Fourier变换红外光谱与Raman光谱分析表明:产物的吸收与振动模式呈现了典型的α-Si3N4的特征;与α-Si3N4块体材料相比,部分峰位发生了蓝移,也有几个峰位发生了少许的红移,这是α-Si3N4纳米材料小尺寸效...
CONSTITUTION:An Si3N4 film 7 is formed on the surface of an InP crystal 1 and a Raman spectroscopy is performed on the surface of the crystal 1. In the formation of film 7, the refractive index thereof, the wavelength of incident light and thickness thereof are so set as to confine ...
I. Liquid n〣utane and the Assignment of the Normal Modes of Vibration The Raman spectrum ofn‐butane has been investigated over the temperature range 147°K to 305°K. The results clearly show the presence of two rotational i... GJ Szasz,N Sheppard,DH Rank - 《Journal of Chemical ...