Raman scattering was used to measure local strain at various points across single point plunge and feed cuts in crystalline silicon and germanium. Spectra were obtained using various excitation wavelengths (514.5 and 488.0 nm), which, due to their differing penetration lengths in the various ...
Raman scattering is used to study the phenomenon of spontaneous long-range ordering in GaInP2 epilayers. The measurements are performed in a ser... F.,Alsina,N.,... - 《Physical Review B》 被引量: 53发表: 1996年 Structural and optical properties of GaInP grown on germanium by metal-organ...
ChemInform Abstract: RAMAN SPECTRA OF SILICON TETRAFLUORIDE AND GERMANIUM TETRAFLUORIDE CRYSTALSIR and Raman spectra (solids and liquids)Nois available for this article.doi:10.1002/chin.197808012E. R. BERNSTEING. R. MEREDITHJohn Wiley & Sons, LtdCheminform...
Raman scattering of light by optical phonons in Si-Ge-Si structures with quantum dotsExperimental/ elemental semiconductorsgermaniuminterface phononsRaman spectrasemiconductor heterojunctionssemiconductor quantum dotssilicon/ Raman scatteringoptical phonons
In recent years, non-metallic materials such as silicon and germanium nanostructures 18-21 , two-dimensional materials (e.g., graphene, MoS 2 , and h-BN) 22-25 , and semiconducting metal oxides 26-27 have been 阅读了该文档的用户还阅读了这些文档 ...
higher than 1273 K, Raman spectroscopy and microscopy analyses revealed the presence of silicon nanocrystals embedded in a matrix containing Si, O, and N... M Bedjaoui,B Despax - 《Thin Solid Films》 被引量: 35发表: 2010年 Effect of germanium concentration and oxide diffusion barrier on the...
Thus, the micro‐Raman technique is well suited for metrology of strained silicon test structures. Furthermore, it is shown that mechanical strain close to silicon‐germanium structures can be measured with near‐field resolution utilizing tip‐enhanced Raman scattering (TERS). For device ...
Analyzes the carbon (C) local mode in C[sub y]Si[sub 1-y] alloys grown by molecular beam epitaxy. Use of Raman spectroscopy; Comparisons between the Raman spectrum of silicon (Si) in germanium (Ge) and C in Si; Details on the intensity of the infrared absorption; Calculations of the ...
Optical amplification by surface-plasmon-resonant Au grating substrates: monolayer MoS2 with 170-fold second harmonic generation and 3-fold (off-resonance) Raman scattering. Superlattices Microstruct. 160, 107077 (2021). Article CAS Google Scholar Feng, X. et al. 2D inorganic bimolecular crystals ...
Amorphous germanium oxide (GeOx) films have attracted significant interest as a potential material for post-silicon transistors due to the fact that germanium is characterized by a higher mobility of electrons and holes than silicon [1]. Despite this, a fundamental understanding of the processes ...