- **tCL(CAS Latency)**:列地址选通延迟,表示从发送读取命令到数据准备就绪的时间。 - **tRCD(RAS to CAS Delay)**:行地址到列地址的延迟,表示激活行地址后到列地址可访问的时间。 - **tRP(Row Precharge Time)**:行预充电时间,表示关闭当前行并准备激活新一行所需的时间。 - **tRAS(
您可以在内存模块背面看到一系列四个数字表示的内存时序: 尝试将tCL、tRCD、tRP和tRAS各降低1。重新启动您的PC并检查其性能是否稳定。确保不要将时序降低过多,否则会遇到性能问题。 增加电压以获得更稳定性 在超频时,您可能希望增加DRAM电压以提高内存的稳定性,特别是在进行相对高的超频时。 我们建议在增加DRAM电压...
2. tRCD: 9~11 3. tRP: 6~11 4. tRAS: 24~30 5. Command Rate: 1 / 2 6. tRC: 15~40 7. tRFC: 90ns / 110ns / 160ns / 300ns / 350ns 8. tREF: 3.9ms / 7.8msFor test of a ram timing component, other components (except tRC and tREF) are set to the lowest possib...
CAS# latency (CL)内存读写操作前列地址控制器的潜伏时间 CAS Column Address Strobe列地址选通脉冲 RAS# to CAS# delay (tRCD)行寻址到列寻址延迟时间 RAS (Row Address Strobe)行地址选通脉冲 RAS# Precharge (tRP)内存行地址控制器预充电时间 4 Cycle Time (tRAS)内存行有效至预充电的最短周期 12 DRAM ...
You can also try lowering the timing of your memory to get better performance. You can see the timing of your memory on the back of your module as a series of four numbers: Try lowering the tCL, tRCD, tRP, and tRAS by 1 each. Reboot your PC and check if its performance is stable...
If the user is not doing overclocking, he/she only needs to input the CL value of the product in the order of tCL, tRCD, tRP, tRAS. If there is no numbers shown on product packaging, simply keep it as “Auto”. The adjustment of CL Value is under “Advance DRAM Configuration.” ...
The other timings that you're referring to are handled entirely by the motherboard anyway, the memory profile on the memory stick don't apply to those. You only need to worry about tCL, tRCD, tRP, tRAS, tRC, tFAW, tRRD_S, tRRD_L, and I don't believe that there even is a tCCDL...
Row Address to Column Address Delay (tRCD) – The second number denotes the minimum number of clock cycles it will take to open a row (again, on that giant spreadsheet) and access the required column. Remember, unlike tCL, tRCD isn’t an exact number but is the maximum delay. ...
。 CAS Latency tCL“行地址控制器延迟时间”（1.5/ 2.0/ 2.5/ 3.0）（CAS Latency Time、CAS Timing Delay）从已经寻址的行，到达输出缓存器的数据所需的时钟循环数。内存制造商将优化的可能设置值以CL Rating的方式作列表。 Command Rate CMD（1/ 2）（Command Rate、MA 1T/2T Select）以...
Tcl [Auto] -> [38] Trcd [Auto] -> [38] Trp [Auto] -> [38] Tras [Auto] -> [70] DRAM VDD Voltage [Auto] -> [1.10000] DRAM VDDQ Voltage [Auto] -> [1.10000] PMIC Voltages [Auto] -> [Sync All PMICs] Memory VDD Voltage [Auto] -> [1.10000] Memory VDDQ Voltage [Auto] -...