- **tCL(CAS Latency)**:列地址选通延迟,表示从发送读取命令到数据准备就绪的时间。 - **tRCD(RAS to CAS Delay)**:行地址到列地址的延迟,表示激活行地址后到列地址可访问的时间。 - **tRP(Row Precharge Time)**:行预充电时间,表示关闭当前行并准备激活新一行所需的时间。 - **tRAS(Row Active ...
您可以在内存模块背面看到一系列四个数字表示的内存时序: 尝试将tCL、tRCD、tRP和tRAS各降低1。重新启动您的PC并检查其性能是否稳定。确保不要将时序降低过多,否则会遇到性能问题。 增加电压以获得更稳定性 在超频时,您可能希望增加DRAM电压以提高内存的稳定性,特别是在进行相对高的超频时。 我们建议在增加DRAM电压...
2. tRCD: 9~11 3. tRP: 6~11 4. tRAS: 24~30 5. Command Rate: 1 / 2 6. tRC: 15~40 7. tRFC: 90ns / 110ns / 160ns / 300ns / 350ns 8. tREF: 3.9ms / 7.8msFor test of a ram timing component, other components (except tRC and tREF) are set to the lowest possi...
If the user is not doing overclocking, he/she only needs to input the CL value of the product in the order of tCL, tRCD, tRP, tRAS. If there is no numbers shown on product packaging, simply keep it as “Auto”. The adjustment of CL Value is under “Advance DRAM Configuration.” Th...
第一个数字最为重要,表示读 取命令到第一个输出数据之间的延迟,即CL。这是纵向地址脉冲的反应时间。第二个数字表示从内存行地址到列地址的延迟时间,即tRCD。第三个数字表示内 存行地址控制器预充电时间,即tRP,指内存从结束一个行访问到重新开始的间隔时间。第四个数字表示内存行地址控制器激活时间(tRAS)。
tRAS is the minimum number of cycles between a row being opened and the precharge command being issued to close it again. This has historically been around the value of tRCD + tCL. For current DDR5 modules, however, it appears to be set nearer tRCD +(2x tCL). It’s unclear if this ...
Row Address to Column Address Delay (tRCD) – The second number denotes the minimum number of clock cycles it will take to open a row (again, on that giant spreadsheet) and access the required column. Remember, unlike tCL, tRCD isn’t an exact number but is the maximum delay. ...
In the excel sheet, device info for MT41K128M16JT-125 is tRCD=tRP=CL=13.75 we got these values from datasheet but how to calculate tRAS(is it tRAS = tCL + tRCD + tRP)? The DDR stress tool result is attached. Thanks, Amit micron_dddr_stress_test.txt.zip 0 Kudos Reply 01...
In the excel sheet, device info for MT41K128M16JT-125 is tRCD=tRP=CL=13.75 we got these values from datasheet but how to calculate tRAS(is it tRAS = tCL + tRCD + tRP)? The DDR stress tool result is attached. Thanks, Amit micron_dddr_stress_test.txt.zip 0 Kudos Reply 01...
。 CAS Latency tCL“行地址控制器延迟时间”（1.5/ 2.0/ 2.5/ 3.0）（CAS Latency Time、CAS Timing Delay）从已经寻址的行，到达输出缓存器的数据所需的时钟循环数。内存制造商将优化的可能设置值以CL Rating的方式作列表。 Command Rate CMD（1/ 2）（Command Rate、MA 1T/2T Select）以...