TPS7H6003-SP, TPS7H6013-SP, TPS7H6023-SP SNOSDE3C – JULY 2023 – REVISED APRIL 2024 TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers 1 Features • Radiation Performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of ...
GUIDE FOR THE PRODUCTION AND ACQUISITION OF RADIATION-HARDNESS ASSURED MULTICHIP MODULES AND HYBRID MICROCIRCUITSdoi:JEDEC JEP133C一份针对辐射硬度保证(RHA)多芯片模块(MCM)和混合微电路供应商和用户的修订和扩展出版物现已面世.JEP133的A版包括对引言的修改,对定义的澄清以及对文件中几个技术问题的澄清.此外,...
TPS7H2211-SP, TPS7H2211-SEP SLVSEW6F – AUGUST 2021 – REVISED MARCH 2024 TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) ...
TPS7H2211-SP, TPS7H2211-SEP SLVSEW6F – AUGUST 2021 – REVISED MARCH 2024 TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) ...