日志信息 DEV/4/FLASH_ERASE_COUNT_NOTICE: The max count of physical erase blocks is over the threshold1.(Count=[ULONG1], threshold1 =[ULONG2]) V200R010C10及之后版本支持该日志。 仅AR502EG-L、AR502EG-La、AR502EG-Lj、AR502EG-L-PD、AR502EGW-L、AR502EGRb-L、AR502EGRc-Lc、AR502EGRz...
DEV/4/FLASH_ERASE_COUNT_NOTICE: The max count of physical erase blocks is over the threshold1.(Count=[ULONG1], threshold1 =[ULONG2]) V200R010C10 and later versions support this log. Only the AR502EG-L, AR502EG-La, AR502EG-Lj, AR502EG-L-PD, AR502EGW-L, AR502EGRb-L, AR502...
我目前的需求是这样的:我需要将mass erase操作集成到我的程序中去,使用芯片的JTAG接口,通过操作IR与DR寄存器,或是操作其他寄存器来实现类似UniFlash中Mass Erase的操作(而不是使用UniFlash与XDS110来擦除芯片)。 由于芯片的CCFG区域设置了读保护,我无法按例程中给出的erase操作(因为它只能擦除没...
百度试题 题目U-Boot下擦除nand flash的指令是( ) A. nand write B. erase nand C. erase D. nand E. rase 相关知识点: 试题来源: 解析 D.nand 反馈 收藏
during source erase Technique to improve the source leakage of flash EPROM cells during source eraseTechnique to improve the source leakage of flash EPROM cells during source erasePerumal Ratnam
PURPOSE: An erasing method for preventing over-erase of a memory cell and a flash memory device using the same are provided to reduce a total erasing time by reducing flash memory cell numbers which are over-erased in a main erase operation. CONSTITUTION: A value of address counter, a value...
Part Number:CC2642ROther Parts Discussed in Thread:UNIFLASH 您好,我目前有一个文件在CCFG区域设置了对Sector0与CCFG区域设置了读保护,这导致我在执行sector擦除时擦除失败。我查看了Reference Manual,其中表明进行mass erase或对CCFG区域进行擦除可以接触读保护,但由于我的CCFG区域设置了保护导致对该区域的擦除无...
The firmware upgrade channel-type zigbee erase flash command erases the flash memory of smart terminals. Only AR502EGRz-Lc and AR502EGRz-L support this command. Format firmware upgrade channel-type zigbee { all | hwarc | hwbmcd | hwcc | hwdgcp | hwgem | hwirr | hwmvrdc | hwod | ...
FIG. 1is a schematic diagram of a Flash EEPROM according to a first embodiment of the present invention; FIG. 2is a schematic diagram of a positive voltage generator means supplying positive voltage to a common source line of the Flash EEPROM when the latter is operated in ERASE mode; ...
Part Number:CC2642R Other Parts Discussed in Thread:UNIFLASH 您好,我目前有一个文件在CCFG区域设置了对Sector0与CCFG区域设置了读保护,这导致我在执行sector擦除时擦除失败。我查看了Reference Manual,其中表明进行mass erase或对CCFG区域进行擦除可以接触读保护,但由于我的CCFG区域设置了保护...