R6006KND3TL1 Memory Type - Power - Output - Modulation or Protocol - Modulation - Style - Resistance (Ohms) - Utilized IC / Part - Protocol - Applications - Size / Dimension - GPIO - Standards - Cross Reference - Memory Size - Writable Memory - Interface - Packaging and delivery ...
R6006KND3TL1品牌厂家:ROHM,所属分类:晶体管-FET,MOSFET-单个,可在锐单商城现货采购R6006KND3TL1、查询R6006KND3TL1代理商; R6006KND3TL1价格批发咨询客服;这里拥有R6006KND3TL1中文资料、引脚图、Datasheet数据手册、pdf功能说明书、规格参数、现货库存、封装信息、产品选型手册,还可快速找到R6006KND3TL1替代型号...
R6006KND3TL1 Mounting Type standard Description standard Application TO-252 Type standard Series standard Features standard Manufacturing Date Code standard Supplier: Shenzhen Haorui Network Technology Co., Ltd. Lead Free Status: Lead free / RoHS Compliant Datasheet: Please contact us Shipping by: DHL...
型号:R6006KND3TL1 品牌:Rohm 封装:TO-252-2(DPAK) 描述: 国内价格 1+20.34705 10+13.15542 50+12.36609 100+9.03339 库存:100 去购买 型号:R6006KND3TL1 品牌:ROHM SEMICONDUCTOR 封装:TO-252-2(DPAK) 描述:表面贴装型 N 通道 600 V 6A(Tc) 70W(Tc) TO-252 国内价格 香港价格 1+25.105211+3.03779 ...
制造商编号R6006KND3TL1 制造商ROHM(罗姆) 授权代理品牌 唯样编号A-R6006KND3TL1 供货自营 产品周期 量产中 无铅情况/RoHs无铅/符合RoHs 描述 连续漏极电流Id:6A(Tc) FET类型:N-Channel 栅极电压Vgs:5.5V@1mA Pd-功率耗散(Max):70W(Tc) 封装/外壳:TO-252-3 ...