电器电子英语词汇... ... quantum theory of light 光的量子理论quantum well structure量子阱结构quantum yield 量子效率 ... www.eduzhai.net|基于22个网页 2. 发展出用量子井结构 最近,随著半导体磊晶技术的改进, 已发展出用量子井结构(quantum well structure)作为固态雷射用之饱和吸收体。由 於半导 … ...
In this lamination structure, the InGaAs layer is an electron confinement layer and the GaAsSb layer 24 is the positive hole confinement layer. A band discontinuity value of a conduction band is approximately 0.42eV, that of a valence electron band is approximately 0.26eV, and an energy ...
quantum well structure 量子阱结构 quantum well material 【化】 量子阱材料 quantum well materials 【化】 量子阱材料 As well 倒不如, 还是...的好最好...还是(It will be As well to stop that young screamer. 但是最好还是让那个大哭大叫的孩子住声。) as well 1. 同样,也,还 2. 也,一样...
A two-dimensional (2D) quantum well structure consists of a very thin layer of material that is nanometers thick in one dimension and semi-infinitely large in the other two dimensions. From: Progress in Materials Science, 2013 About this pageSet alert ...
A quantum well structure according to the invention includes a quantum well layer () arranged between two barrier layers (). It is distinguished in that at least one of the barrier layers () includes nanostructures () which compensate or modulate a lateral homogeneity of the barrier layer (),...
摘要: PURPOSE: To provide a quantum-well structure for promoting the mutual interaction of electron - phonon for forming a pair of electrons in a substance at a temperature at which a pair of electrons do not normally exist.收藏 引用 批量引用 报错 分享 文库...
3 Recent work has demonstrated that high efficiency and stable PeLEDs can be achieved based on self-organized multiple quantum wells (MQWs) structure with an energy cascade.4,6 The MQW perovskite is a mix of layered perovskites with different band gaps resulting from various layer numbers (n) ...
Fine-structure splitting (FSS). Splitting of exciton energy levels caused by spin interactions and/or wavefunction asymmetry. Dark (free) exciton In a dark exciton, the spins of the electron and the hole are parallel and spontaneous emission is forbidden due to spin momentum conservation. DC Star...
Method of making quantum well structure with self- 优质文献 相似文献 参考文献 引证文献Sub-30 nm InAs Quantum-Well MOSFETs with self-aligned metal contacts and Sub-1 nm EOT HfO2 insulator Sub-30 nm III-V planar Quantum-Well (QW) n-type MOSFETs are fabricated through a self-aligned CMOS com...
Bo, Large Energy Band-Gap Tuning of 980 nm InGaAs/InGaAsP Quantum Well Structure Via Quantum Well Intermixing. Solid State Electron. 79, 281 (2013). Article Google Scholar D. Nie, T. Mei, H.S. Djie, M.K. Chin, X.H. Tang, and Y.X. Wang, Analysis of Inductively Coupled Argon ...