AEC-Q100标准解读之NVM Endurance, Data Retention, and Operational Life(EDR) NVM Endurance, Data Retention, and Operational Life(EDR) 参考标准: AEC Q100-005; 目的:评估非挥发性memory器件在多次读写算后的持久性能,在重复读写之后加速非挥发性memory器件存储节点的电荷损失; 失效机制:电子迁移,氧化层破裂...
双层式高温试验箱 2. 非易失性存储耐久试验(数据保持)(EDR-LTDR) 2.1 测试信息 样品数量:每批80颗,3批次;共240颗待测芯片(实验前样品已通过高低温Erase Endurance Cycling Test) 参考方法:AEC-Q100-005 测试温度:Ta = +25℃ 测试时间:1000小时 测试确 :芯片功能/性能测试(试验前后在室温、高温分别进行电测。
AEC - Q100-005 - Rev-D - 非易失性存储器程序-擦除耐久性.Non-Volatile Memory Program-Erase Endurance Data Retention and Operational Life Test.pdf14页 内容提供方:请输入昵称 大小:63.13 KB 字数:约4.29万字 发布时间:2022-05-19发布于广东
AEC - Q100-005 - REV-D October 11, 2011 Component Technical Committee Automotive Electronics Council Change Notification The following summary details the changes incorporated into AEC-Q100-005 Rev-D: • Section 3, Procedure: Separated specifications of High temperature Data Retention (HTDR),...
标准号:AEC - Q100-005 - REV-D1 -2012 检测标准/方法:非易失性存储器程序/擦除持久性,数据保留,和操作寿命测试 AEC - Q100-005 - REV-D1 -2012 检测对象:电子元器件 检测项目/参数:擦写耐久性和数据保持试验 相关标准 《GB/T 31838.2-2019》固体绝缘材料 介电和电阻特性 第2部分:电阻特性(DC方法) ...
AEC-Q100-005-REV-D NON-VOLATILEMEMORYPROGRAM/ERASEENDURANCE, DATARETENTION,ANDOPERATINGLIFETEST AEC-Q100-005-REV-D October11,2011 ComponentTechnicalCommittee AutomotiveElectronicsCouncil Acknowledgment Anydocumentinvolvingacomplextechnologybringstogetherexperienceandskillsfrommanysources.The ...
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The device provides interrupt handling either in hardware or software by enabling the selection of the interrupt request(IRQ) signal. The device includes: (a) an interrupt controller(15) which generates the IRQ signal to transmit the instruction to the system; (b) a PAL(14) which generates th...
摘要: PROBLEM TO BE SOLVED: To prevent trouble from being spread around a lower valve by forming a return path for returning hot air to a hot air blower integrally with an outer tub, and positioning a lower bellows hose on the downstream side rather than a drain valve....