A proximity-effect correction method for VLSI patterns has been developed. In this method, a dose ratio has been introduced as a control parameter for the negative- resist thickness after development, in addition to the proximity parameters. A new technique has been used to obtain the proximity ...
美 英 na.邻近效应 网络近接效应;临近效应;接近效应 英汉 网络释义 na. 1. 邻近效应 例句 更多例句筛选
•Uni-axial strain along channel length is main effect to consider,but strain along other directions are important too 12 April 16, 2009 Source of stress… •Un-in te n tio n a l • Shallow trench isolation(nFET&pFET),compressive • Intentional • Stress memorization(nFET) ...
As VLSI technology scales toward 45nm and beyond, both timing and power performance of integrated circuits are increasingly affected by process variations. Well proximity effects contribute with a non-negligible amount of time and power variation on recent technology. Therefore the well proximity-based ...
Stimiman, J., et al., “Quantifying Proximity and Related Effects in Advanced Wafer Processes”, Precim Compnay, Hewlett Packard Labs (9 pages), date not available. Sugawara, M., et al., “Practical Evaluation of Optical Proximity Effect Correction by EDM Methodology”, Sony Corporation (11...
Layout Dependent Proximity Effects
According to the presently preferred embodiment of the invention, a very sensitive, light-touch detector circuit may be provided using adaptive analog VLSI techniques. The circuit of the present invention is very robust and calibrates out process and systematic errors. The detector circuit of the pr...
Abstract: As the density of VLSI circuits increases, the proximity effect has been one of the critical issues in optical lithography. In general, the linewidth difference between dense and isolated patterns corresponds to 0.08 $mu@m when a conventional i-line single resist process using a 0.54 ...
proximity effectquality factor (Q)WLANThe quality factor (Q) measures the ability of a component to preserve the energy received during the circuit operation. Q is the most important parameter in an inductor. It is mainly limited by the loss due to inductor metal resistance, substrate resistance...
proximity effect (lithography)/ neural networksoptical proximity correctionmask fabricationnonlinear two-dimensional spatial inverse filterdeconvolutional factorBoltzmann machineIn this paper a neural network method for optical proximity correction is presented. A non linear two-dimensional spatial inverse filter ...