1Properties of Metal, Nonmetals,and MetalloidsMetals, Nonmetals and Metalloids• The individual atomic properties of atoms can be related to t..
We present a bottom-up approach, probing the structures and electronic properties of small metal oxide clusters, and relating these properties to chemical reactivity. The work presented focuses on unary and binary Group 6 metal oxides (Mo and W) and their reactivity toward H 2O and CO 2. We...
Controllable hydrogenation of metal oxides provides a route to tune their electronic and redox properties for desired applications. Here, authors study proton movement into molybdenum trioxide and propose a solution treatment method for controllable metal oxide hydrogenation using metallic cations. ...
The materials present around us are grouped widely into metals and non-metals. But can you say by their properties which material is metal and which is a non-metal? Is wood a metal? or Iron a non-metal? Let us learn this topic in detail. ...
This study conducts a thorough examination of the properties of four transition-metal dichalcogenides (TMDCs): WTe2, WSe2, ZrTe2, and NiTe2, using first-pr
Electrical properties of metal-oxide-semiconductor structures with low-energy Ge-implanted and annealed thin gate oxides. Electrical properties of metal-oxide-semiconductor structures with low-energy Ge-implanted and annealed thin gate oxides.doi:10.1063/1.2888537... Kapetanakis,E.,Normand,... - 《...
Transparent conductive oxides are appealing materials for optoelectronic and plasmonic applications as, amongst other advantages, their properties can be modulated by engineering their defects. Optimisation of this adjustment is, however, a complex desig
More importantly, such interfacial properties can often be controlled by the polarization state of the ferroelectric film48,49,77. Wu et al. fabricated the first metal-ferroelectric-semiconductor transistor78. This ferroelectric field-effect transistor (FeFET) uses the polarization in a ferroelectric ...
We developed a physical model to fundamentally understand the conductive filament (CF) formation and growth behavior in the switching layer during electroforming process in the metal-oxide-based resistive random-access memories (RRAM). The effects of the
This process involves the synthesis of materials by a chemical solution that produces hydrolysis and condensation reactions of metal alkoxides that act as precursors of an integrated network of polymers, also called gel, which are deposited on the surface of the material [4, 152]. This technique...