Properties of Sapphire 来自 Springer 喜欢 0 阅读量: 61 作者:ER Dobrovinskaya,LA Lytvynov,V Pishchik 摘要: Mirror-turn axis of the sixth order (ternary inversion axis)Three axes of the second order normal to itThree symmetry planes normal to the axes of the second order and intercrossing ...
Properties of Sapphiredoi:10.1007/978-0-387-85695-7_2Elena R DobrovinskayaLeonid LytvynovValerian Pishchik
The effect of structural flaws on the properties of the sapphire shell of a discharge radiation sourceGavrishS. V.RUSSIAN JOURNAL OF NONDESTRUCTIVE TESTING C/C OF DEFEKTOSKOPIIAGavrish, S.V., The Effect of Structural Flaws on the Properties of a Sapphire Shell of a Discharge Radiation Source,...
Ga2O3 thin films were grown on sapphire m-cut () and r-cut () orientations substrates at different temperatures by metal-organic chemical vapor deposition. Structural and optical properties of the Ga2O3 films were investigated including the influence by annealing for the obtained films. The Ga2...
aSapphire exhibits a host of attractive properties such as high transparency from the vacuum ultraviolet(VUV,142 nm)through the visible,near infrared(IR),and mid-IR 3 to 5 mm bands,and again 青玉通过可看见陈列许多有吸引力的物产例如高透明度从真空紫外(VUV, 142毫微米),在红外线(IR附近)和中间IR...
Sapphire 展览一大堆有吸引力的财产例如来自至可见,近的 infrared(IR) 的真空 ultraviolet(VUV,142 nm) 的高透明度, mid-IR 3 至 5 毫米的乐队,再次( 翻译结果3复制译文编辑译文朗读译文返回顶部 蓝宝石展品从真空紫外线具有吸引力的属性,如高透明度的主机 (真空紫外,142 nm) 可见,近红外线 (IR) 和中红外 ...
(1120)-plane oriented epitaxial ZnO films were deposited on an R-plane sapphire substrate using the RF-magnetron-mode ECR sputtering equipment. As the results of the measurement, the films showed a good orientation and excellent effective electromechanical coupling factors (k<SUB>eff</SUB>) for ...
The measurement of emissions from the window material of sapphire was performed through multi-wavelength pyrometer and spontaneous spectroscopic techniques in the pressure range of 40–120 GPa. The results showed that the spectral distribution with wavelength clearly fit well with the grey-body spectrum...
exciton without and with the cover shows a red-shift of about 15 meV due to the Al2O3cover. In a further experiment, Lippert et al.52found a red-shift of the A exciton of a WSe2monolayer of 12 meV in changing substrates from SiO2to the stronger screening of a sapphire substrate...
The intrinsic R_s of YBCO films on the order of 1 mΩ, and the tan δ of sapphire on the order of 10~(-8) at 15 K and 40 GHz could be measured simultaneously using sapphire resonators with a 10 μm-gap. 展开 关键词: dielectric resonator intrinsic surface impedance loss tangent ...