While increasing the width-length ra- tio of the MOSFET will decrease the propagation time, it is worth noting that tp ∝ Wn-11/N , and therefore that as increasing channel width continuously will result in an inverter effectively loading itself, thereby increasing the overall circuit delay. ...
2.3.3 Propagation Delay in CMOS Circuits The propagation delay, τp, in a digital circuit is defined: (2.3)τp=τout−τin where τout and τin are the time instances when the output and input voltage cross the VDD/2 level, respectively [2, 7, 23–25], Speed and power dissipation...
propagation delay through the noninverting Bi-CMOS gates of the present invention are roughly equal to the propagation delay of a single Bi-CMOS inverter... U Khieu Cong 被引量: 0发表: 1998年 The Design of Bi-CMOS LVDS Output Buffer with ESD Protection Circuit Using 90nm CMOS Technology Th...
A simple method to evaluate the propagation delay of complex CMOS gates computed from inverter delay models based on the nth-power law MOSFET model is presented. The method is based on a transistor collapsing technique developed for complex gates and takes into account short-channel effects, intern...
2.3.3 Propagation Delay in CMOS Circuits The propagation delay, τp, in a digital circuit is defined: (2.3)τp=τout−τin where τout and τin are the time instances when the output and input voltage cross the VDD/2 level, respectively [2, 7, 23–25], Speed and power dissipation...
CMOS inverter chainPulse widthPulse propagationSingle-event transientSingle-event transient (SET) due to heavy-ion strike is a serious reliability concern for devices operated in radiation environment. Due to technology scaling, nodal capacitance decreases which increases the SET vulnerability. In this ...
The widely accepted model for CMOS gate and i... BK Kaushik,S Sarkar,RP Agarwal - 《Integration the Vlsi Journal》 被引量: 52发表: 2007年 The Effect of Signal Activity on Propagation Delay of CMOS Logic Gates Driving Coupled On-Chip Interconnections The effect of interconnect coupling ...
Proceedings of the 27th European solid-state device research conference: 27th European solid-state device research conference(ESSDERC'97), 22-24 September 1997, Stuttgart, GermanyM.-E. Arbey, S. Galdin, P. Dollfus, P. Hesto, "Predictive expression of propagation delay in short channel CMOS/...
The propagation delay through the noninverting Bi-CMOS gates of the present invention are roughly equal to the propagation delay of a single Bi-CMOS inverter.doi:US5243237 ACong KhieuUSUS5243237 * 1992年1月22日 1993年9月7日 Samsung Semiconductor, Inc. Noninverting bi-cmos gates with ...
Static CMOS inverterOscillation frequencySingle-ended ring oscillatorIn this paper the issue of obtaining an accurate equation for the delay of a CMOS inverter is explored. In the conventional equations provided for the propagation delay, many simplifying assumptions are made. Also some important events...