.2009 AlInN/GaN Based HEMTs fabricated on a (111) high- resistivity silicon substrate achieved the excellent value to demonstrate the interest of AlInN/GaN on silicon HEMT technology for low-cost millimeter-wave
Chang C H, Hsu H T, Huang L C, et al. Fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate with slant field plates using deep-UV lithography featuring 5W/mm power density at X-band. In: Proceedings of Asia Pacific Microwave Conference, 2012. 941–943...
GaN-based HEMTs on silicon substrate are particularly appealing to the IC industry due to its compatibility with the industry-matured Si-CMOS IC technologies. Tremendous research and development work has been conducted and reported in the recent years with significant progresses on GaN-on-Si HEMTs...
Figure 3.Device with AlN passivation and via-holes through the substrate [18,25]: (a) structural diagram and (b) breakdown characteristics. The electrode on the back side of the device can adjust the electric field distribution at the AlGaN/GaN surface by inducing negative charges to form a...
Using GaN as a homoepitaxial substrate can improve device quality, and hydride vapor phase epitaxy (HVPE) can be used to grow GaN epitaxial layers, but the size of GaN layers grown by HVPE technology is limited, and it is difficult to control the thickness of GaN films, high technical ...
For AlGaN/GaN HEMT, Ti/Al/Ni/Au is one of the most mature metal schemes for Ohmic contact formation [74,75]. For β-Ga2O3 devices, Chen et al. [73] deposited Ti/Al/Ni/Au multilayer metal stacks and carried out an RTA process with the temperature at 470 °C for 70 s. By ...