Gowar, “Power MOSFETs: Theory and Applications”, Wiley, New York, 1989. Google Scholar D. Kahng and M.M. Atalla, “Silicon–Silicon Dioxide Field Induced Surface Devices”, IRE Solid State Device Research Conference, 1960. Google Scholar D. Kahng, “A Historical Perspective on the ...
The invention of the power ID MOSFET was partly driven by the limitations of bipolar power junction transistors (BJTs) which, until recently, was the device of choice in power electronics applications. Although it is not possible to define absolutely the operating boundaries of a power device, 0...
Power MOSFET Basics -- Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Introduction to Power MOSFETs and their Applications -- Fairchild Semiconductor Understanding Power MOSFETs -- Fairchild Semiconductor The Do's and Don'ts of Using MOS-Gated Transistors -- International Rectifier ...
The invention of the power ID MOSFET was partly driven by the limitations of bipolar power junction transistors (BJTs) which, until recently, was the device of choice in power electronics applications. Although it is not possible to define absolutely the operating boundaries of a power device, 0...
systems, servers, LED lighting, solar inverters, industrial power supplies, and also onboard automotive chargers. Switched Reluctance Machine (SRM) industrial drives9used in transportation applications find a favorable space for Si SJ MOSFETs. It is estimated that the market share of SJ ...
A method is suggested to convert ladder passive prototypes containing either grounded inductors or FDNRs into MOSFET-C equivalent circuits using some of the... L Serrano,A Carlosena - 《International Journal of Circuit Theory & Applications》 被引量: 55发表: 1997年 Detailed comparison of threshold...
Low on-resistance power LDMOSFET using double metal process technology under pulsed drain bias conditions, and the reverse blocking voltage is 42 V. This on-resistance represents the lowest among the lateral type power FETs wi... M Hoshi,T Mihara,T Matsushita,... - International Symposium on ...
The results of this study are consistent with the theory that activation of the parasitic bipolar transistor initiates the power MOSFET failure during turn-off. 展开 关键词: Electrical Faults Field Effect Transistors Metal Oxide Semiconductors Nondestructive Tests Power Supply Circuits Bipolar Transistors ...
Contents : Theory of CMOS Digital Circuits and Circuit Failures Challenging the prevailing opinion that circuit simulation can reveal all problems in CMOS circuits, Masakazu Shoji maintains that simulation cannot completely ... Shoji,Masakazu - 《Dermatologic Surgery》 被引量: 94发表: 1992年 Central ...
91000 www.vishay.com Application Note AN-1005 Vishay Siliconix Power MOSFET Avalanche Design Guidelines INTRODUCTION Overview To better understand and utilize power MOSFETs, it is important to explore the theory behind avalanche breakdown and to understand the design and rating of rugged MOSFETs. ...