Allowing the gate electrode to be doped with the p-type dopant (e.g., boron) facilitates forming the transistor with an associated work function having a desired value (e.g., coincident with a Fermi level of about 4.8 to about 5.6 electron volts)....
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The value for effective barrier height in the absence of bias, ϕB0was chosen as 0.35 eV: low enough to inject current at a level suitable for practical applications and simultaneously to contribute significantly to self-heating; but high enough to be the exclusive current-limiting and cont...
The addition of such dopants tends to change the resistivity of the polysilicon film, typically causing the sheet resistance to decrease to a lower value. FIGS. 6A and 6B illustrate the step 306 in greater detail, in which a sequence of process steps, including the steps 602, 604, 606, ...
work function of the layer. Therefore the germanium concentration in the formed germano-silicide region90will vary depending on the initial germanium concentration in the underlying layer60. The final work function of the germano-silicide region90will depend on the metal used to form the germano-...
the polysilicon structure, thereby forming a silicon dioxide layer on the sidewalls, and etching the workfunction metal layer to remove a portion of the workfunction metal layer not protected by the hard mask structure, thereby forming a workfunction metal structure beneath the polysilicon structure...
In order to realize stable NiSi work function in the case of the small dimension transistors, two-step silicidation process is extensively studied. As-doped sample is found to have larger reaction rate than B-doped sample. Different thermal conditions for both As-doped and B-doped samples are...
USING OF INDIUM FOR FIXING WORK FUNCTION OF P-TYPE DOPED POLYSILICON OR POLYSILICON GERMANIUMPROBLEM TO BE SOLVED: To avoid an unnecessary influence in doping into a gate electrode.ROTONDARO ANTONIOアントーニ ロトンダロCHAMBERS JAMES Jジェイムズ ジェイ,チャンバースJAIN AMITABH...
Allowing the gate electrode to be doped with the p-type dopant (e.g., boron) facilitates forming the transistor with an associated work function having a desired value (e.g., coincident with a Fermi level of about 4.8 to about 5.6 electron volts)....
Allowing the gate electrode to be doped with the p-type dopant (e.g., boron) facilitates forming the transistor with an associated work function having a desired value (e.g., coincident with a Fermi level of about 4.8 to about 5.6 electron volts)....