字面意思直译就可以，金属刻蚀，poly刻蚀，氧化物刻蚀。具体工艺条件无法回答，只能简单的说，这3中刻蚀在半导体行业都是干法刻蚀，也就是dry etch。主要区别在于所有的刻蚀气体不一样，比如，金属刻蚀用CL2，氧化物刻蚀用C4F6，C5F8。
The use of an ammonium hydroxide spike to a hot tetra methyl ammonium hydroxide (TMAH) solution to form an insitu poly oxide decapping step in a polysilicon (poly) etch process, results in a single step rapid poly etch process having uniform etch initiation and a high etch selectivity, ...
ETCH中 poly..只要在FAB,在制造,在制造技术部,没觉得好,说不定再来次519停电事故,遭殃的人更多,公司也够狠的,强制压制OP在没有排完毒气的FAB工作,人性连牲畜都不如!
poly etch 培训 POLY/P0LYCIDE腐蚀工艺简介 CRITICALDEVICEREQUIRMENTSFORPOLYSILICONETCHING HighselectivitytogateorcapacitordielectricHighfidelitymaskreplication ——CD——CDcontrol——High——HighselectivitytoPhotoresist——No——Noundercutting Profilecontrol ——Anisotropic——Anisotropicwithoutcholorocarbonchemistry——...
polyetch培训.ppt,POLY/P0LYCIDE 腐蚀工艺简介 CRITICAL DEVICE REQUIRMENTS FOR POLYSILICON ETCHING High selectivity to gate or capacitor dielectric High fidelity mask replication ——CD control ——High selectivity to Photoresist ——No undercutting Profile
EtchProcessSequence P.4 PolysiliconEtch–Processstep Processsteps:▪Breakthrough ▪Removalofnativeoxide,energeticAr+bombardment▪Mainetch ▪Highpolyetchrate,ClandHBrchemistry▪Endpoint/timemode▪Overetch▪Preciselyprofilecontrolbychamber P.5 ProcessControl ▪EndpointDetection 光學放射頻譜分析是最有用...
PolysiliconPolycide etch process for sub-micron g 优质文献 相似文献 参考文献 引证文献W-polycide dual-gate structure for sub-1/4 micron low-voltage CMOS technology characteristics, low leakage currents, good short channel behavior and low gate sheet resistance of 8-10 Ω/□ ...
Polysilicon, silicon nitride, low-temperature oxide (LTO), diamond films are some examples of the films grown from LPCVD. LPCVD-grown silicon nitride films are known to be an effective etch mask for wet anisotropic etching due to their pinhole-free high quality. In addition, the stress of ...
Metal Etch,Poly Etch和Oxide Etch各是什么?具体工艺是什么?问题描述:如题阅读536 关键字: 我要提问 我要回答 回答:暂时还没回答,等你发挥 快来回答问题吧 相关问答 如何有效运用AI技术促进区域创新发展? 如何构建一个高效的智能技术转移系统以促进创新和商业化进程? AI技术转化研究成果时面临的主要挑战是什么?
做AA、Poly，最考验litho和etch（刻蚀，一般指离子刻蚀），怎么样曝出来符合要求的尺寸，fab叫CD（critical dimension，特征尺寸，其实就是大家常说的45nm工艺等，poly的线宽），是最核心的工艺，一般fab里最顶尖的机台和工程师就是为这个服务的，intel有鱼鳍结构的，后面或者3D晶体管，这个必须大牛才能解释清楚了。—...