photodetectorpolarizationThe molybdenum disulfide (MoS 2)-based photo-detectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS 2 were fabricated by applying a self-...
Moreover, the photodetector exhibits a high external quantum efficiency of 120% and a peak specific detectivity of 1.23 x 10(10) Jones under the normal illumination. This polarization-sensitive narrowband photoresponse can be ascribed to the charge collection narrowing mechanism assisted by the ...
A device for detecting polarization of light comprising a first photodetector tuned to absorb TE polarization, a second photodetector tuned to absorb TM polarization, and a circuit for comparing an ou
SUBJECT AREAS: CARBON NANOTUBES AND FULLERENES NANOPHOTONICS AND PLASMONICS ELECTRICAL AND ELECTRONIC ENGINEERING MATERIALS SCIENCE Broadband, Polarization-Sensitive Photodetector Based on Optically-Thick Films of Macroscopically Long, Dense, and Aligned Carbon Nanotubes Se´bastien Nanot1, Aron W. Cummings2...
Highly sensitive infrared polarized photodetector enabled by out-ofplane PSN architecture composing of p-MoTe_(2),semimetal-MoTe_(2)and n-SnSe_(2) power-free and polarization-sensitive.We stack the p-type 2H-MoTe_(2),Weyl semimetal 1T-MoTe_(2)and n-type SnSe_(2)layer-by-layer constructi...
Here, we demonstrate a broadband photodetector using a layered black phosphorus transistor that is polarization-sensitive over a bandwidth from 400 nm to 3,750 nm. The polarization sensitivity is due to the strong intrinsic linear dichroism, which arises from the in-plane optical anisotropy of this...
leads to a higher voltage being applied to the gate electrode of the transistor, switching the transistor to the off-state. (ii) With polarized light illuminating the photodetector, Bi2Se2S NWs generate photo-generated carriers, leading to a decrease in the resistance of the photodetector. This...
Polarization-Sensitive Ultraviolet Detection from Oriented- CdSe@CdS-Dot-in-Rods-Integrated Silicon Photodetectorcomposite filmsdot-in-rods materialsEMCCDphotodetectionPolarization can be used to distinguish artificial objects in complicated environments. The development of polarization-sensitive detection at ...
Herein, a compact hot-electron-based photodetector that combines polarization sensitivity and circularly polarized light detection in the near-infrared region was fabricated using an indium tin oxide (ITO)-Au hybrid layer. Furthermore, the sensitivity of the device was significantly increased by adding...
Herein, a self‐powered photodetector is developed with broadband response ranging from deep ultraviolet to near‐infrared by combining FA1− xCsxPbI3 perovskite with PdSe2 layer, a newly discovered TMDs material. Optoelectronic characterization reveals that the as‐...