A circuit is provided for reducing the turn-off transition time of a switching PNP transistor by providing a reverse drive current to the base of the PNP transistor after the drive current has been removed from the base. The reverse drive current is generated by an NPN transistor, the emitter...
A circuit is provided for reducing the turn-off transition time of a switching PNP transistor by providing a reverse drive current to the base of the PNP transistor after the drive current has been removed from the base. The reverse drive current is generated by an NPN transistor, the ...
MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Absolute Maximum Ratings T a = 25°C unless otherwise noted Electrical Characteristics T a =25°C unless otherwise noted * Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2% Symb...
2N4403 [PNP三极管] PANJIT 2N4403 1 2 3BASE COLLECTOR 2 3 1 PNP
PNP Epitaxial Transistor Download 4 PagesScroll/Zoom 2 100% 制造商 CHENMKO [Chenmko Enterprise Co. Ltd.]网页 http://www.chenmko.com标志 2 RATING CHARACTERISTIC CURVES ( 2SB772ZPT ) CHARACTERISTICS ( At TA = 25 oC unless otherwise noted ) PARAMETERS CONDITION Collector Cut-off Current Emitter ...
功能描述PNPTransistor Download5 Pages Scroll/Zoom 100% 制造商ONSEMI [ON Semiconductor] 网页http://www.onsemi.com 标志 类似零件编号 - NSS12200WT1G_13 制造商部件名数据表功能描述 ON SemiconductorNSS12200WT1G 134Kb/5P12 V, 3 A, Low VCE(sat) PNP Transistor ...
then the transistor will be in reverse biased and said to be turn ON. If supply is provided to the base pin, it stops conducting current between emitter and collector and said to be in OFF state. For the protection of transistor, a resistance added in series with it. For finding the va...
2DB1188P Q R 32V PNP 中间电流转换电阻 产品说明书 2DB1188P/Q/R Document number: DS31144 Rev. 7 - 2 1 of 7 www.diodes.com February 2013 © Diodes Incorporated 32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features ∙ BV CEO > -32V ∙ I C = -2A high Continuous Current ...
40 V, 7.0 A, Low V CE(sat) PNP Transistor ON Semiconductor’s e2PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat)) and high current gain capability. These are designed for use in low voltage, high speed sw...
Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 5. Guaranteed by design but not tested.类似零件编号 - NSS20500UW3TBG 制造商 部件名 数据表 功能描述 ON Semiconductor NSS20500UW3T2G 61Kb / 6P 20 V, 7.0 A, Low VCE(sat) PNP Transistor July, 2006 ??Rev. 0 NSS20500UW3T...