A circuit is provided for reducing the turn-off transition time of a switching PNP transistor by providing a reverse drive current to the base of the PNP transistor after the drive current has been removed from the base. The reverse drive current is generated by an NPN transistor, the emitter...
A circuit is provided for reducing the turn-off transition time of a switching PNP transistor by providing a reverse drive current to the base of the PNP transistor after the drive current has been removed from the base. The reverse drive current is generated by an NPN transistor, the ...
B, November 2002 Electrical Characteristics TA=25°C unless otherwise noted (Continued) Symbol Parameter Test Condition Switching Characteristics ton Turn-on Time td Delay Time tr Rise Time toff Turn-off Time ts Storage Time tf Fall Time ts Storage Time * Pulse Test: Pulse Width ≤ 300ms, ...
2N4403 [PNP三极管] PANJIT 2N4403 1 2 3BASE COLLECTOR 2 3 1 PNP
MJD350 300V PNP高电压传输器TO252（DPAK）商品说明书 MJD350 Document number: DS31608 Rev. 3 - 2 1 of 7 www.diodes.com January 2018 © Diodes Incorporated Features ∙ BV CEO > -300V ∙ I C = -0.5A Continuous Collector Current ∙ I CM = -0.75A Peak Pulse Current ∙...
Model: TRANSISTOR BCP69T1G ON PKG SOT-223 TRANS BIP PNP 20V 1A Part Number: BCP69T Category: Chipshooters / Chip Mounters Model Year: 2024 Condition: new Location: Guangdong, China ZK Electronic Technology Co., Limited E-mail : sale@hysmt.cn Skype: 14786692449 WhatsAPP:14786692449 Tel: ...
Triode Transistor Condition New Origin Mainland China Description Report Item Specifications: Material: High-quality PNP TO-92 Transistor Quantity: 100PCS/LOT Voltage: 300V Current: 0.5A Type: Triode Transistor Design: TO92 DIP Chipset Features: **Reliable Performance and Versatility** The MPSA92 2S...
NSS35200MR6T1G 35 V, 5 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high ...
NUS5530MN Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor This integrated device represents a new level of safety and board−space reduction by combining the 20 V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides ...
功能描述35 V, 5 A,LowVCE(sat)PNPTransistor Download6 Pages Scroll/Zoom 100% 制造商ONSEMI [ON Semiconductor] 网页http://www.onsemi.com 标志 类似零件编号 - NSS35200MR6T1G 制造商部件名数据表功能描述 ON SemiconductorNSS35200MR6T1G 120Kb/6P35 V, 5 A, Low VCE(sat) PNP Transistor ...