The term ‘PNP’ stands for positive, negative, positive, and also known as sourcing. The PNP transistor is a BJT; in this transistor, the letter ‘P’ specifies the polarity of the voltage necessary for the emitter terminal. The second letter ‘N’ specifies the polarity of the base termi...
描述/ Descriptions TO-92 塑封封装 PNP 半导体三极管. Silicon PNP transistor in a TO-92 Plastic Package. 特征 / Features 低电流,低电压. Low current, Low voltage. 用途 / Applications 用于一般放大. General purpose amplifier. 2N3906 PNP 半导体三极管 引脚排列 / Pinning PIN1:Collector PIN 2...
PNP Bipolar Transistor Characteristics Generation of the Ic versus Vce curve for a PNP bipolar transistor. Define the vector of base currents and minimum and maximum collector-emitter voltages by double clicking on the block labeled 'Define Conditions (Ib and Vce)'. Run the tests and generate plo...
2SB1386 Rev.F Oct.-2019 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 PNP 半导体三极管.Silicon PNP transistor in a SOT-89 Plastic Package. 特征 / Features 饱和压降低,极好的直流电流增益,与 2SD2098 互补.无卤产品. Low VCE(sat), excellent DC current gain , complements the 2SD2098. ...
PNP and NPN Transistor Working The basic principles of operation of both NPN and PNP transistors are the same. The only difference is in their basing and the power supply polarity for each type. In the NPN transistor the current flows between the collector and the emitter when a positive supp...
KTA1268 Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-92 塑封封装 PNP 半导体三极管.Silicon PNP transistor in a TO-92 Plastic Package. 特征 / Features 低噪声,高 hFE,高击穿电压. Low noise, high hFE, high breakdown voltage. 用途 / Applications 用于低噪声放大. Low noise audio amplifier ...
MMBT3906 2A三极管 SOT23 0.2A 40V PNP贴片三极管 1 / 7 SOT-23塑封封装PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.高h FE ，低V CE(sat)。 High DC Current Gain, Low Collector to Emitter Saturation Voltage.用于普通放大及开关。General purpose amplifier and switching. PIN ...
Characteristics Small-Signal Short-Circuit Forward Current Transfer Ratio Small-Signal Short-Circuit Forward Current Transfer Ratio Output Capacitance Switching Characteristics Turn-On Time Turn-Off Time Test Conditions Symbol Units IC = -100 mA dc, 2N3740 IC = -100 mA dc, 2N3741 VCE = -40 V ...
Unique dc characteristics of a new gated lateral pnp bipolar junction transistor (BJT) using 0.8 μm BiCMOS technologyIn this paper, the detailed device dc performance of a gated lateral pnp (LPNP) device that has five terminals, collector C, base B, emitter E, gate G, and substrate S, ...
AlowCOStandhighperformanceverticalPNPtransistorforSiGeBiCMOSprocesswasdesigned.Effectsofdifferentemitterandbasedesignsondevicecharacteristicswerecomparedagainstsimulationresults.PerformanceofthePNPtransistorwasfurtherimprovedonthefinalizeddevicedesignandbestguessprocessbysimulation.ThePNPtransistorfabricatedinsimulatedprocess...