On the other hand, NMOS is a type of MOSFET where the majority charge carriers are electrons. It operates with a negative voltage supply. In an NMOS transistor, the source and drain regions are doped with p-type material, while the channel is doped with n-type material. When a negative ...
Optimal strain in the channel region of a PMOS transistor is provided by silicon alloy material in the junction regions of the device in a non-planar relationship with the surface of the substrate. The silicon alloy material, the dimensions of the silicon alloy material, as well as the non-...
NMOS transistors are characterized by the use of an n-type (negatively doped) semiconductor material for the source and drain regions, while the substrate is made of p-type (positively doped) semiconductor material. When a positive voltage is applied to the gate terminal of an NMOS transistor, ...
The characteristics curves example shown above, shows the four different regions of operation for a JFET and these are given as: • Ohmic Region – When VGS = 0 the depletion layer of the channel is very small and the JFET acts like a voltage controlled resistor. • Cut-off Region –...
CMOS device with raised source and drain regions A method of forming a semiconductor structure includes forming a PMOS device and an NMOS device. The step of forming the PMOS device includes forming a first gate stack on a semiconductor substrate; forming a first offset spacer on a sid... Li...
The characteristics curves example shown above, shows the four different regions of operation for a JFET and these are given as:• Ohmic Region – When VGS = 0 the depletion layer of the channel is very small and the JFET acts like a voltage controlled resistor. • Cut-off Region – ...
United States Application US20040262683 Note: If you have problems viewing the PDF, please make sure you have the latest version of Adobe Acrobat. Back to full textHome Search Services © 2004-2024 FreePatentsOnline.com. All rights reserved. Privacy Policy & Terms of Use....
A PMOS transistor and a forming method thereof are provided to improve off-leakage current increase, operation voltage damage, and operation speed lowering due to HEIP(Hot Electron Induced Punch through) phenomenon by forming a smaller gate tap at a boundary region of an active region and an ...
A lowered transistor configuration for a conventional is selectively, for example, for n - transistors, is provided, as a result of which the deformation inducing efficiency and the series resistor is to be improved, while a substantially planar configuration or a raised drain - and source ...
A vertical transistor which is built in a substrate of a given first carrier type utilizing standard processes but which has a unique layout which facilitates high voltage, high current operation whil