High side over current threshold4 |IOC2| - |ICL2| |IOC3| - |ICL3| |IOC4| - |ICL4| VDD = 5 V VDD = 5 V VDD = 5 V VDD = 5 V tDF Delay time for fault detection guaranteed by design tDF_off Switch-off delay time - tDF_del Delayed switch-off time - tSC Short-circuit ...
Over temperature and short circuit protection Full diagnosis capability Fast switch-off open-drain input/output Current-monitoring with current feedback output signal CF SPI-interface for configuration and diagnosis Error history in second diagnosis register Two independent enable pins: "/ABE" ...
The PMOS transistor switch control circuit comprises the power supply VCC, the power supply STDVCC, a control signal terminal F_STANDBY, the PMOS transistor, a triode D, a resistor R1, a resistor R2, a resistor R3 and a capacitor C, the source electrode of the PMOS transistor, one ...
NMOS devices feature better efficiencies when used in the high side of a gate voltage—at a higher input voltage than what is necessary. This can make for a complex circuit configuration, however. Alternately, PMOS devices can yield simplified circuit configurations while reducing design load because...
DATA SHEET www.onsemi.com 30 V PMOS-NMOS Bridge Driver FAN3278/D SOIC8 CASE 751EB Description The FAN3278 dual 1.5 A gate driver is optimized to drive a high−side P−channel MOSFET and a low−side N−channel MOSFET in motor control applications operating from a voltage rail up ...
The first thing to note when selecting/designing a MOS tube driver is the amount of transient short-circuit current available. The second note is that NMOS, which is commonly used for high-side driving, needs to have a gate voltage greater than the source voltage when turned on. When the ...
The TLF50201EL is a high frequency PWM step-down DC/DC converter with an integrated PMOS power switch, packaged in a small PG-SSOP-14 with exposed pad.
This type of configuration is commonly known as a Voltage Follower or Emitter Follower circuit.The common collector, or emitter follower configuration is very useful for impedance matching applications because of the very high input impedance, in the region of hundreds of thousands of Ohms while ...
A high voltage circuit driver includes high and low side driver cells to drive a high and a low side power MOSFET, a bootstrap circuit to energize the high side driver cell, a high voltage PMOS transistor (HVPMOS) between a voltage source and the bootstrap circuit, wherein the HVPMOS is...
The decoupled read scheme for a high RSNM is changed. Instead of an NMOS with node Q as the gate trigger, the read scheme is moved to the QB side and uses a PMOS with node QB as its gate trigger. The PMOS transistor, MDR, acts as a switch here to choose whether the status of VV...