Plasma parameters and etching mechanisms of metals and semiconductors in hydrogen chloride52.77.Bn81.65.CfThe parameters and steady state composition of HCl plasma are investigated under dc glow discharge condi
The balance between physical and chemical etching can be controlled by the etching parameters (e.g., plasma gas composition, pressure,substrate temperatureand biasing), the utilization of mask andpassivation layer, and the selection of plasma types, which leads to versatility in creatingVNAswith tun...
If the logarithm of the rate of etching of a SiO2 surface depends linearly on 1/T, the reciprocal of the temperature T of the surface, one may be justified in regarding the etching process as a chemical reaction occurring under a nearly thermal equilibrium, and may determine an (apparent) ...
Surface modification of polyamide meshes and nonwoven fabrics by plasma etching and a PDAcellulose coating for oilwater separation 热度: A Target Simulation for Studies of Radar Detection in Clutter 热度: PlasmaScienceandTechnology,Vo1.11,No
gradually becomes uniform/nonuniform with the decrease of the value of the dominant amplitude/wavelength of roughness; on the other hand, a string algorithm was used to simulate the evolution rule for a rough profile of a mask hole with etching time under various values of roughness parameters....
etching, or an inductively coupled plasma RIE (ICP-RIE) reactors, which use higher frequencies to enable higher densities and a faster etch rate. Designing a plasma etch reactor has a wide-range of input parameters to give a large design and operating space for solving a given manufacturing ...
” Conversely, governing equations without transient terms are categorized as “steady-state computation” [109]. In the practice of simulation modeling, transient terms can be disregarded if flow parameters (e.g., velocity, pressure, and temperature) remain stable over time, enabling “steady-...
1.Using specially designed InGaAsP/InP multiple quantum well(MQW) structure,the damage effects of Cl2/H2 inductive coupled plasma(ICP) etching were investigated systematically,and the key processing parameters for low damage ICP etching have been optimized.采用特别设计的InGaAsP/InP多量子阱结构(MQW),研...
The results were compared to the conventional counterparts subjected to the same heat-treatment and nitriding process parameters. Although it would be of great interest to explain the influence of nitriding on the formation of the precipitates, the focus of this work was on an investigation of the...
Figure 10.6 shows that for a given system the two parameters that impact the level of DC bias are the input power and the pressure. The bias voltage is decreased with higher pressures, as the ion bombardment energy is also reduced. For most applications such as reactive ion etching, a large...