2015-06-07上传 plasma chem plasma process (2014) 文档格式: .pdf 文档大小: 561.1K 文档页数: 12页 顶/踩数: 0/0 收藏人数: 0 评论次数: 0 文档热度: 文档分类: 幼儿/小学教育--教育管理 文档标签: plasmachemprocess40201441 系统标签: plasmasdbdschemoxidationmercuryapcds ...
Plasma Chem Plasma Process, 1989, 9 ( 1, Sup2 p l) : 85SMostaghimi J, Boulos MI (1989) Plasma Chem Plasma Process 9:25Schmidt-Szalowski K, Borucka A (1989) Plasma Chem Plasma Process 9:235Sm ith R W , W ei D , Apelian D. Plasma Chem Plasma Process, 1989, 9 ( 1, ...
国际简称:PLASMA CHEM PLASMA P 创刊时间:1981 年发文量:96 出版地:UNITED STATES 官网:http://www.springer.com/physics/classical+continuum+physics/journal/11090 较慢,6-12周审稿时间 3区中科院分区 较易平均录用比例 2.768影响因子 工程:化工小学科 ...
网络等离子加工;等离子工艺;电浆过程 网络释义 1. 等离子加工 合成氧... ... 2、碱性加工( Alkaline Process) 3、等离子加工(Plasma Process) 4、化学沉淀法( Chemically Precipitated Process… www.chinabaike.com|基于7个网页 2. 等离子工艺 ... Die Prepare (芯片预处理)等离子工艺Plasma Process气相---固相...
一、Plasma鞘层内离子的方向性(离子散射)在解释plasma中离子鞘内的离子散射之前,先熟悉一个重要概念:平均自由程MFP:Mean Free Path( \lambda )。所谓平均自由程是指粒子自由碰撞到下次碰撞前,期间所运动的…
本期【精华文章】会介绍等离子体刻蚀。等离子刻蚀,是干法刻蚀中最常见的一种形式,其原理是暴露在电子区域的气体形成等离子体,由此产生的电离气体和释放高能电子组成的气体,从而形成了等离子或离子,电离气体原子通过电场加速时,会释放足够的力量与表面驱逐力紧紧粘合材料或蚀刻表面。下面,是关于等离子体刻蚀的相关介绍。
SUBSTANCE: material placed on substrate holder into magnetic field and under HF voltage having frequency 13.56 MHz is subjected to action of chemically active plasma of HF induction discharge of reduced pressure outside zone of its predominant generation. Plasma is generated by HF induction discharge ...
Supported nanoclusters (SNCs) with distinct geometric and electronic structures have garnered significant attention in the field of heterogeneous catalysis. However, their directed synthesis remains a challenge due to limited efficient approaches. This s
This study investigated the mutual interaction between the plasma and plasma treated water (PTW). Many works have shown that the plasma treatment decreases the pH of PTW due to nitric oxide electrolyte ion but the interactions between PTW and the plasma
Plasma-process induced damage (P2ID) is a serious yield and reliability concern with the continuous VLSI technical node shrinkage. In this paper, P2ID on 65nm node VLSI manufacturing development is investigated. Plasma in high-density plasma deposition (HDP), preclean of physical vapor deposition ...