V pitAMOVPEsuperlatticeInGaNRed LEDMicro-displaySURFACE-MORPHOLOGYSTRAINGROWTHREDUCTIONThe InGaN pseudo-substrate, namely InGaNOS (InGaN On Sapphire), is used to enhance the In incorporation rate in InyGa1-yN/InxGa1-xN multiple quantum wells (MQWs) to get red emission for micro-display ...
Properties of Surface Pit Related Emission in a-plane InGaN/GaN Quantum Wells Grown on r-plane Sapphire Physica Status Solidi C 8 2011: pp. 2179 - 2181. http://dx.doi.org/10.1002/pssc.201001043
Takada, K. Inui, T. Matsue, “Reduction of etch pit density on GaN by InGaN-strained SQW”,J. Cryst. Growth 189/190, 133, (1998). :Ono Y,Iyechika Y,Takada T,et al.Reduction of etchpit density on GaN by InGaN strained SQW. Journal of Crystal Growth . 1998...
Strain relaxation in InGaN/GaN epilayers by formation of V-pit defects studied by SEM, XRD and numerical simulationsdoi:10.1107/S1600576720014764Jana Stranska MatejovaLukas HorakPeter MinarikVaclav Holy
Ha, "Reduction of leakage current in InGaN-base LEDs with V-pit embedded structures," J. Korean Phys. Soc., vol. 60, no. 9, pp. 1367-1370, 2012.Kim H M,Huh C,Park S J.Reduction in leakage current of InGaN-based light emitting diodes by N2O plasma passivation. Solid State ...
We demonstrate improved surface pit and phase separation in thick InGaN grown on a GaN/Si (111) substrate, using plasma-assisted molecular beam epitaxy with an indium modulation technique. The formation of surface pit and compositional inhomogeneity in the InGaN epilayer are investigated using atomic...
Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes with different density and size of V-shaped pits are numerically investigated. Simulation results show that internal quantum efficiency is firstly enhanced and then reduced with an increase in the density and size of pits. It is ...
V‐pit defects in InGaN/GaN were studied by numerical simulations of the strain field and X‐ray diffraction (XRD) reciprocal space maps. The results were compared with XRD and scanning electron microscopy (SEM) experimental data collected from a series of samples grown by metal–organic vapor ...
本发明公开了一种凹槽型电极结构的InGaN基MSM可见光光电探测器. The present invention discloses a visible InGaN-based MSM photodetectors is a channel pit type electrode structure. 器件结构包括衬底(10)及生长于衬底(10)之上的外延层,其中,外延层自下而上的顺序依次为缓冲层(11),过渡层(12),非故意掺杂In...
We demonstrate improved surface pit and phase separation in thick InGaN grown on a GaN/Si (111) substrate, using plasma-assisted molecular beam epitaxy with an indium modulation technique. The formation of surface pit and compositional inhomogeneity in the InGaN epilayer are investigated using atomic...